Publicaciones

• Communication dans un congrès

Personal radio-frequency exposimeters in indoor diffuse environments: Measurement and simulation

Reza Aminzadeh, Arno Thielens, Aliou Bamba, Lamine Kone, Davy Gaillot, M. Lienard, Luc Martens, Wout Joseph

The response of personal exposimeters (PEMs) is studied under diffuse field exposure in indoor environments. A numerical model and a setup for on-body calibration measurements in a reverberation chamber (RC) is proposed for 897–5500 MHz. The proposed numerical simulations are in good agreement with...

10th European Conference on Antennas and Propagation, EuCAP 2016, Apr 2016, Davos, Switzerland. Session A23 - Dosimetry, exposure and SAR assessment, 5 p., ⟨10.1109/EuCAP.2016.7481668⟩. ⟨hal-03346232⟩

• Communication dans un congrès

Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry

Christophe Virgilio, Lucile Broussous, Philippe Garnier, Julien Carlier, Pierre Campistron, V. Thomy, Malika Toubal, Pascal Besson, Laurence Gabette, Bertrand Nongaillard

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial...

13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), Sep 2016, Knokke, Belgium. ⟨10.4028/www.scientific.net/SSP.255.129⟩. ⟨hal-03280231⟩

• Communication dans un congrès

65 nm SOI CMOS 60 GHz passive mixer for six-port technology

Kamel Haddadi, Christophe Loyez

This work describes the design and measurements of a 60 GHz passive mixer for six-port applications operating and implemented in a 65nm SOI CMOS technology. The mixer topology, consisting only of a n-MOS cold-FET and CPW transmission line matching networks, avoids the use of coupler in front of the...

IEEE Topical Conference on Wireless Sensors and Sensor Networks, WiSNet 2016, Jan 2016, Austin, TX, United States. pp.52-55, ⟨10.1109/WISNET.2016.7444320⟩. ⟨hal-03224660⟩

• Communication dans un congrès

A co-design space exploration tool for avionic high performance heterogeneous embedded architectures

Geoffroy Pertuisot, Nicolas Belanger, Yassin El Hillali, Smail Niar, Atika Rivenq

Avionics in the helicopter manufacturers' landscape faces new challenges. Whereas customers raise continuously their needs in terms of new functions and embedded systems performances, certification authorities maintain complex rules to fulfill for parallel computing. This constraining...

11th International Design and Test Symposium, IDT 2016, Dec 2016, Hammamet, Tunisia. pp.77-82, ⟨10.1109/IDT.2016.7843018⟩. ⟨hal-03528686⟩

• Communication dans un congrès

Modeling transistor level masking of soft errors in combinational circuits

Ihsen Alouani, Smail Niar, Yassin El Hillali, Atika Rivenq

Technology scaling in modern electronic circuits shrinks the transistor size and dramatically increases the sensitivity of semiconductor devices to radiations. Consequently, soft errors emerged as a serious reliability threat in both sequential and combinational circuits. To accurately estimate...

2015 IEEE East-West Design and Test Symposium, EWDTS 2015, Sep 2015, Batumi, United States. pp.7493140, ⟨10.1109/EWDTS.2015.7493140⟩. ⟨hal-03528693⟩

• Article dans une revue

Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

Jing Li, Evelyne Lampin, Christophe Delerue, Yann-Michel Niquet

We calculate the phonon-limited carrier mobility in (001) Si films with a fully atomistic framework based on a tight-binding (TB) model for the electronic structure, a valence-force-field model for the phonons, and the Boltzmann transport equation. This framework reproduces the electron and phonon...

Journal of Applied Physics, 2016, 120 (17), pp.174301. ⟨10.1063/1.4966616⟩. ⟨cea-01849845⟩

• Article dans une revue

Improved Performance of YIG (Y₃Fe₅O₁₂) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique

Xin Guo, Ying Chen, Genshui Wang, Jun Ge, Yuanyuan Zhang, Xiaodong Tang, Freddy Ponchel, Denis Remiens, Xianlin Dong

High-quality Yttrium iron garnet (YIG) films with crack-free surface and improved magnetic performance were grown on platinum (Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88%...

• Article dans une revue

Growth of c -Axis-Oriented BiCuSeO Thin Films Directly on Si Wafers

Xiaolin Wu, Linjie Gao, Pascal Roussel, El Hadj Dogheche, Jianglong Wang, Guangsheng Fu, Shufang Wang

Single-phase, c-axis-oriented BiCuSeO thin films have been directly grown on the commercial silicon (001) wafers without any surface pretreatment by using pulsed laser deposition. X-ray diffraction pole figure confirms that the film does not have any ab-plane texture, whereas cross-sectional...

Journal of the American Ceramic Society, 2016, 99 (10), pp.3367-3370. ⟨10.1111/jace.14359⟩. ⟨hal-02263699⟩

• Article dans une revue

Nickel Decorated on Phosphorous-Doped Carbon Nitride as an Efficient Photocatalyst for Reduction of Nitrobenzenes

Anurag Kumar, Pawan Kumar, Chetan Joshi, Manvi Manchanda, Rabah Boukherroub, Suman L Jain

Nickel nanoparticle-decorated phosphorous-doped graphitic carbon nitride (Ni@g-PC 3 N 4) was synthesized and used as an efficient photoactive catalyst for the reduction of various nitrobenzenes under visible light irradiation. Hydrazine monohydrate was used as the source of protons and electrons...

Nanomaterials, 2016, 6 (4), pp.59. ⟨10.3390/nano6040059⟩. ⟨hal-01456554⟩

• Article dans une revue

Modeling and simulation of InAs/GaAs quantum dots for solar cell applications

A. Benahmed, Abdelkader Aissat, Abdelmalek Benkouider, Jean-Pierre Vilcot

This paper proposes a method of modeling and simulation of InAs/GaAs-based quantum dots (QDs) for solar cell. The main objective is to find the growth parameters in order to produce an optimal double heterostructure using two semiconductor materials InAs and GaAs. We are interested in particular on...

Optik, 2016, 127 (7), pp.3531-3534. ⟨10.1016/j.ijleo.2015.12.136⟩. ⟨hal-01434975⟩