Publicaciones

• Article dans une revue

BRANCHED POLYESTERS FROM GERMYLATED AND FATTY COMPOUNDS

Nadia Katir, Daniela Andrade, Mohamed Dahrouch, Enzo Díaz, Nicolas Gatica, D. Hourlier, Nazmy Reyes, Miguel Zarraga

Journal of the Chilean Chemical Society, 2016, 61 (1), pp.2784-2787. ⟨10.4067/S0717-97072016000100008⟩. ⟨hal-02396330⟩

• Communication dans un congrès

A Digital Delay Line with Coarse/Fine tuning through Gate/Body biasing in 28nm FDSOI

Ilias Sourikopoulos, Antoine Frappé, Andreia Cathelin, Laurent Clavier, Andreas Kaiser

This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body...

46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), Sep 2016, Lausanne, Switzerland. pp.145-148, ⟨10.1109/ESSCIRC.2016.7598263⟩. ⟨hal-03270099⟩

• Communication dans un congrès

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin, Oscar Garcia-Perez, Ignacio Íñiguez-De-La-Torre, Susana Perez, Tomás González, Javier Mateos, Philippe Altuntas, N. Defrance, Marie Lesecq, Virginie Hoel, Yvon Cordier, Stephanie Rennesson

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of...

11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩. ⟨hal-03270103⟩

• Article dans une revue

A Configurable Transmitter Architecture for IEEE 802.11ac and 802.11ad Standards

Fikre Tsigabu Gebreyohannes, Antoine Frappé, Andreas Kaiser

IEEE Transactions on Circuits and Systems II: Express Briefs, 2016, 63 (1), pp.9-13. ⟨10.1109/TCSII.2015.2468920⟩. ⟨hal-03377045⟩

• Article dans une revue

Transport properties of multigrained nanocomposites with imperfect interfaces

Pier Luca Palla, Stefano Giordano

Journal of Applied Physics, 2016, 120 (18), 184301, 9 p. ⟨10.1063/1.4967316⟩. ⟨hal-03407507⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 5/5]

Raffaele Pisano

2016. ⟨hal-04511017⟩

• Article dans une revue

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors

Nicolas Herbecq, Isabelle Roch-Jeune, Astrid Linge, Malek Zegaoui, Pierre-Olivier Jeannin, Nicolas Clément, Jean-Paul Rouger, F Medjdoub

Physica Status Solidi A (applications and materials science), 2016, 213 (4), pp.873--877. ⟨10.1002/pssa.201532572⟩. ⟨hal-02277752⟩

• Article dans une revue

Electronic structure investigation of Al0.7Ga0.3As/GaAs nanometric heterostructures by Kelvin force microscopy

Sylvain Pouch, Francois Triozon, Nicolas Chevalier, Thierry Melin, Yann Michel Niquet, Lukasz Borowik

Kelvin force microscopy provides a spatially resolved measurement of the surface potential, which is related to the energetic band structure of a material. The goal of this work is to investigate the surface potential on Al0.7Ga0.3As and GaAs heterostructures with a decreasing layer thickness up to...

RSC Advances, 2016, 6 (8), pp.6782-6787. ⟨10.1039/c5ra24505b⟩. ⟨cea-01851572⟩

• Communication dans un congrès

Coherent & tunable THz source

R. Paquet, S. Blin, M. Myara, L. Le Gratiet, M. Sellahi, B. Chomet, P. Latzel, Guillaume Ducournau, Jean-Francois Lampin, G. Beaudoin, I. Sagnes, A. Garnache

Meeting GDR NanoTeramir, 2016, Paris, France. ⟨hal-01919731⟩

• Article dans une revue

Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons

Jing Li, Yann-Michel Niquet, Christophe Delerue

We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the...

Physical Review Letters, 2016, 116 (23), pp.236602. ⟨10.1103/PhysRevLett.116.236602⟩. ⟨cea-01849844⟩