Publicaciones

Affichage de 6021 à 6030 sur 16103


  • Article dans une revue

Channel sounding and indoor radio channel characteristics in the W-band

Maria-Teresa Martinez-Ingles, Davy Gaillot, Juan Pascual-Garcia, Jose-Maria Molina-Garcia-Pardo, Jose-Victor Rodriguez, Lorenzo Rubio, Leandro Juan-Llacer

This work presents directional radio channel measurements in the W-band using a commercial versatile channel sounder based on a vector network analyzer (VNA), capable of measuring scattering parameters from 75 to 500 GHz with frequency converters. The commercial setup has been modified by...

EURASIP Journal on Wireless Communications and Networking, 2016, 2016, pp.30,. ⟨10.1186/s13638-016-0530-7⟩. ⟨hal-03346227⟩

  • Article dans une revue

Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

K.K. Sossoe, Corentin Durand, L. Mathey, T. Alphazan, A. Sylla, M.M. Dzagli, A. Mohou, J.P. Nys, Maxime Berthe, C. Thieuleux, C. Coperet, J.P. Barnes, B. Grandidier

Microelectronic Engineering, 2016, 149, pp.125-128. ⟨10.1016/j.mee.2015.10.002⟩. ⟨hal-02084763⟩

  • Communication dans un congrès

Graphene field effect transistors on flexible substrate : stable process and high RF performance

Wei Wei, Emiliano Pallecchi, Mohamed Moez Belhaj, Alba Centeno, Amaia Zurutuza, Dominique Vignaud, Henri Happy

We report a simple and low temperature fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with 300 nm gate length and different channel width (12 mu m and 24 mu m) were successfully fabricated on Kapton substrate. We report asmeasured...

11th European Microwave Integrated Circuits Conference, EuMIC 2016, Oct 2016, London, United Kingdom. pp.165-168, ⟨10.1109/EuMIC.2016.7777516⟩. ⟨hal-03335833⟩

  • Communication dans un congrès

Development of a reference wafer for on-wafer testing of extreme impedance devices

H. Votsi, I. Roch-Jeune, Kamel Haddadi, C. Li, Gilles Dambrine, P. H. Aaen, N. Ridler

This paper describes the design, fabrication, and testing of an on-wafer substrate that has been developed specifically for measuring extreme impedance devices using an on-wafer probe station. Such devices include carbon nano-tubes (CNTs) and structures based on graphene which possess impedances in...

88th ARFTG Microwave Measurement Symposium, ARFTG 2016, Dec 2016, Austin, United States. 4 p., ⟨10.1109/ARFTG.2016.7839719⟩. ⟨hal-03224658⟩

  • Article dans une revue

High photocatalytic activity of plasmonic Ag@AgCl/Zn2 SnO4 nanocomposites synthesized using hydrothermal method

Monaam Ben Ali, Abderrahmane Hamdi, Habib Elhouichet, Brigitte Sieber, Ahmed Addad, Yannick Coffinier, Luc Boussekey, Mokhtar Férid, Sabine Szunerits, Rabah Boukherroub

Ag@AgCl/Zn 2 SnO 4 (ZTO) nanocomposites were successfully prepared by a hydrothermal method.

RSC Advances, 2016, 6 (83), pp.80310-80319. ⟨10.1039/C6RA14813A⟩. ⟨hal-03837468⟩

  • Communication dans un congrès

Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges

Julien Borrel, Louis Hutin, Helen Grampeix, Emmanuel Nolot, Magali Tessaire, Guillaume Rodriguez, Yves Morand, Fabrice Nemouchi, Magali Gregoire, Emmanuel Dubois, Maud Vinet

In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.

IWJT 2016 - 16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19. ⟨hal-03325000⟩

  • Article dans une revue

Wettability of PEDOT:PSS films

Caroline Duc, Alexis Vlandas, G. Malliaras, V. Senez

Soft Matter, 2016, 12 (23), pp.5146-5153. ⟨10.1039/C6SM00599C⟩. ⟨hal-02566997⟩

  • Article dans une revue

Wetting characterization of high aspect ratio nanostructures by gigahertz acoustic reflectometry

Christophe Virgilio, Julien Carlier, Pierre Campistron, Malika Toubal, Philippe Garnier, L. Broussous, V. Thomy, Bertrand Nongaillard

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real challenge in integrated circuits manufacturing. In fact, bad or non-uniform wetting during wet processes limits chemical reactions and can lead to non-complete etching or cleaning inside the patterns and device...

International Journal of Mechanical and Mechatronics Engineering, 2016, 10 (3), pp.413-418. ⟨hal-03560404⟩