Publicaciones

• Article dans une revue

Channel sounding and indoor radio channel characteristics in the W-band

Maria-Teresa Martinez-Ingles, Davy Gaillot, Juan Pascual-Garcia, Jose-Maria Molina-Garcia-Pardo, Jose-Victor Rodriguez, Lorenzo Rubio, Leandro Juan-Llacer

This work presents directional radio channel measurements in the W-band using a commercial versatile channel sounder based on a vector network analyzer (VNA), capable of measuring scattering parameters from 75 to 500 GHz with frequency converters. The commercial setup has been modified by...

EURASIP Journal on Wireless Communications and Networking, 2016, 2016, pp.30,. ⟨10.1186/s13638-016-0530-7⟩. ⟨hal-03346227⟩

• Article dans une revue

Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

K.K. Sossoe, Corentin Durand, L. Mathey, T. Alphazan, A. Sylla, M.M. Dzagli, A. Mohou, J.P. Nys, Maxime Berthe, C. Thieuleux, C. Coperet, J.P. Barnes, B. Grandidier

Microelectronic Engineering, 2016, 149, pp.125-128. ⟨10.1016/j.mee.2015.10.002⟩. ⟨hal-02084763⟩

• Communication dans un congrès

Graphene field effect transistors on flexible substrate : stable process and high RF performance

Wei Wei, Emiliano Pallecchi, Mohamed Moez Belhaj, Alba Centeno, Amaia Zurutuza, Dominique Vignaud, Henri Happy

We report a simple and low temperature fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with 300 nm gate length and different channel width (12 mu m and 24 mu m) were successfully fabricated on Kapton substrate. We report asmeasured...

11th European Microwave Integrated Circuits Conference, EuMIC 2016, Oct 2016, London, United Kingdom. pp.165-168, ⟨10.1109/EuMIC.2016.7777516⟩. ⟨hal-03335833⟩

• Communication dans un congrès

Contact resistance study of “edge-contacted” metal-graphene interfaces

V. Passi, A. Gahoi, J. Ruhkopf, S. Kataria, Francois Vaurette, E. Pallecchi, H. Happy, M. C. Lemme

The contact resistance RC of "edge-contacted" metal-graphene interfaces is systematically studied. Our experiments demonstrate a reduction of contact resistance by intentional patterning of graphene to create "edge contacts". The parameter space for different hole patterns in...

46th European Solid-State Device Conference, ESSDERC 2016, Sep 2016, Lausanne, Switzerland. pp.236-239, ⟨10.1109/ESSDERC.2016.7599629⟩. ⟨hal-03335829⟩

• Communication dans un congrès

Personal radio-frequency exposimeters in indoor diffuse environments: Measurement and simulation

Reza Aminzadeh, Arno Thielens, Aliou Bamba, Lamine Kone, Davy Gaillot, M. Lienard, Luc Martens, Wout Joseph

The response of personal exposimeters (PEMs) is studied under diffuse field exposure in indoor environments. A numerical model and a setup for on-body calibration measurements in a reverberation chamber (RC) is proposed for 897–5500 MHz. The proposed numerical simulations are in good agreement with...

10th European Conference on Antennas and Propagation, EuCAP 2016, Apr 2016, Davos, Switzerland. Session A23 - Dosimetry, exposure and SAR assessment, 5 p., ⟨10.1109/EuCAP.2016.7481668⟩. ⟨hal-03346232⟩

• Communication dans un congrès

Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry

Christophe Virgilio, Lucile Broussous, Philippe Garnier, Julien Carlier, Pierre Campistron, V. Thomy, Malika Toubal, Pascal Besson, Laurence Gabette, Bertrand Nongaillard

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial...

13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), Sep 2016, Knokke, Belgium. ⟨10.4028/www.scientific.net/SSP.255.129⟩. ⟨hal-03280231⟩

• Communication dans un congrès

65 nm SOI CMOS 60 GHz passive mixer for six-port technology

Kamel Haddadi, Christophe Loyez

This work describes the design and measurements of a 60 GHz passive mixer for six-port applications operating and implemented in a 65nm SOI CMOS technology. The mixer topology, consisting only of a n-MOS cold-FET and CPW transmission line matching networks, avoids the use of coupler in front of the...

IEEE Topical Conference on Wireless Sensors and Sensor Networks, WiSNet 2016, Jan 2016, Austin, TX, United States. pp.52-55, ⟨10.1109/WISNET.2016.7444320⟩. ⟨hal-03224660⟩

• Communication dans un congrès

A co-design space exploration tool for avionic high performance heterogeneous embedded architectures

Geoffroy Pertuisot, Nicolas Belanger, Yassin El Hillali, Smail Niar, Atika Rivenq

Avionics in the helicopter manufacturers' landscape faces new challenges. Whereas customers raise continuously their needs in terms of new functions and embedded systems performances, certification authorities maintain complex rules to fulfill for parallel computing. This constraining...

11th International Design and Test Symposium, IDT 2016, Dec 2016, Hammamet, Tunisia. pp.77-82, ⟨10.1109/IDT.2016.7843018⟩. ⟨hal-03528686⟩

• Communication dans un congrès

Modeling transistor level masking of soft errors in combinational circuits

Ihsen Alouani, Smail Niar, Yassin El Hillali, Atika Rivenq

Technology scaling in modern electronic circuits shrinks the transistor size and dramatically increases the sensitivity of semiconductor devices to radiations. Consequently, soft errors emerged as a serious reliability threat in both sequential and combinational circuits. To accurately estimate...

2015 IEEE East-West Design and Test Symposium, EWDTS 2015, Sep 2015, Batumi, United States. pp.7493140, ⟨10.1109/EWDTS.2015.7493140⟩. ⟨hal-03528693⟩

• Article dans une revue

Improved Performance of YIG (Y₃Fe₅O₁₂) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique

Xin Guo, Ying Chen, Genshui Wang, Jun Ge, Yuanyuan Zhang, Xiaodong Tang, Freddy Ponchel, Denis Remiens, Xianlin Dong

High-quality Yttrium iron garnet (YIG) films with crack-free surface and improved magnetic performance were grown on platinum (Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88%...