Publicaciones

• Communication dans un congrès

Contact resistance study of “edge-contacted” metal-graphene interfaces

V. Passi, A. Gahoi, J. Ruhkopf, S. Kataria, Francois Vaurette, E. Pallecchi, H. Happy, M. C. Lemme

The contact resistance RC of "edge-contacted" metal-graphene interfaces is systematically studied. Our experiments demonstrate a reduction of contact resistance by intentional patterning of graphene to create "edge contacts". The parameter space for different hole patterns in...

46th European Solid-State Device Conference, ESSDERC 2016, Sep 2016, Lausanne, Switzerland. pp.236-239, ⟨10.1109/ESSDERC.2016.7599629⟩. ⟨hal-03335829⟩

• Communication dans un congrès

A Digital Delay Line with Coarse/Fine tuning through Gate/Body biasing in 28nm FDSOI

Ilias Sourikopoulos, Antoine Frappé, Andreia Cathelin, Laurent Clavier, Andreas Kaiser

This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body...

46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), Sep 2016, Lausanne, Switzerland. pp.145-148, ⟨10.1109/ESSCIRC.2016.7598263⟩. ⟨hal-03270099⟩

• Communication dans un congrès

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin, Oscar Garcia-Perez, Ignacio Íñiguez-De-La-Torre, Susana Perez, Tomás González, Javier Mateos, Philippe Altuntas, N. Defrance, Marie Lesecq, Virginie Hoel, Yvon Cordier, Stephanie Rennesson

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of...

11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩. ⟨hal-03270103⟩

• Article dans une revue

Modeling and simulation of InAs/GaAs quantum dots for solar cell applications

A. Benahmed, Abdelkader Aissat, Abdelmalek Benkouider, Jean-Pierre Vilcot

This paper proposes a method of modeling and simulation of InAs/GaAs-based quantum dots (QDs) for solar cell. The main objective is to find the growth parameters in order to produce an optimal double heterostructure using two semiconductor materials InAs and GaAs. We are interested in particular on...

Optik, 2016, 127 (7), pp.3531-3534. ⟨10.1016/j.ijleo.2015.12.136⟩. ⟨hal-01434975⟩

• Communication dans un congrès

Coherent & tunable THz source

R. Paquet, S. Blin, M. Myara, L. Le Gratiet, M. Sellahi, B. Chomet, P. Latzel, Guillaume Ducournau, Jean-Francois Lampin, G. Beaudoin, I. Sagnes, A. Garnache

Meeting GDR NanoTeramir, 2016, Paris, France. ⟨hal-01919731⟩

• Article dans une revue

DS-UWB and TH-UWB Energy Consumption Comparison

Adil Elabboubi, Fouzia Elbahhar, Marc Heddebaut, Yassin El Hillali

The energy consumption of the wireless communication systems is starting to be unaffordable. One way to improve the power consumption is the optimization of the communication techniques used by the communication networks and devices. In order to develop an energy efficient UWB multi-user...

Journal of Telecommunications and Information Technology, 2016, 2016 (1), pp.101-109. ⟨hal-01469836v2⟩

• Article dans une revue

Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons

Jing Li, Yann-Michel Niquet, Christophe Delerue

We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the...

Physical Review Letters, 2016, 116 (23), pp.236602. ⟨10.1103/PhysRevLett.116.236602⟩. ⟨cea-01849844⟩

• Article dans une revue

Inverse saffman-taylor experiments with particles lead to capillarity driven fingering instabilities

Ilyesse Bihi, Michael Baudoin, Jason E. Butler, Christine Faille, Farzam Zoueshtiagh

Using air to displace a viscous fluid contained in a Hele-Shaw cell can create a fingering pattern at the interface between the fluids if the capillary number exceeds a critical value. This Saffman-Taylor instability is revisited for the inverse case of a viscous fluid displacing air when partially...

Physical Review Letters, 2016, 117 (3), ⟨10.1103/PhysRevLett.117.034501⟩. ⟨hal-02636447⟩

• Article dans une revue

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, J.C. Dejaeger, Nathalie Malbert

Microelectronics Reliability, 2016. ⟨hal-01718762⟩

• Article dans une revue

Broadband dielectric characterization of aqueous saline solutions by an interferometer-based microwave microscope

S. Gu, Tianjun Lin, T. Lasri

The complex dielectric permittivity of aqueous saline solutions has been determined in the frequency range [2-18 GHz] with a home-made near-field microwave microscope. The instrument is built on a vector network analyzer, a matching network, and an evanescent microwave probe. The interferometer-...

Applied Physics Letters, 2016, 108 (24), pp.242903. ⟨10.1063/1.4953629⟩. ⟨hal-03538486⟩