Publicaciones

Affichage de 6521 à 6530 sur 16064


  • Article dans une revue

A one-dimensional optomechanical crystal with a complete phononic band gap

J. Gomis-Bresco, D. Navarro-Urrios, M. Oudich, Said El-Jallal, A. Griol, D. Puerto, E. Chavez, Yan Pennec, Bahram Djafari-Rouhani, F. Alzina, A. Martínez, C.M. Sotomayor Torres

Recent years have witnessed the boom of cavity optomechanics, which exploits the confinement and coupling of optical and mechanical waves at the nanoscale. Among their physical implementations, optomechanical (OM) crystals built on semiconductor slabs enable the integration and manipulation of...

Nature Communications, 2014, 5, pp.4452. ⟨10.1038/ncomms5452⟩. ⟨hal-01054998⟩

  • Ouvrages

Lazare and Sadi Carnot. A Scientific and Filial Relationship. 2nd ed

Charles C. Gillispie, Raffaele Pisano

Springer, 2014, 978-94-017-8010-0. ⟨hal-04515864⟩

  • N°spécial de revue/special issue

[Editorial] Beamforming techniques for wireless MIMO relay networks

Athanasios G. Kanatas, Demosthenes Vouyioukas, Gan Zheng, Laurent Clavier

International Journal of Antennas and Propagation, 2014, Special Issue on Beamforming techniques for wireless MIMO relay networks, ⟨10.1155/2014/354714⟩. ⟨hal-01059856⟩

  • Communication dans un congrès

Experimental investigation of the characteristics of the electromagnetic reverberation in the UWB bands

Aliou Bamba, Wout Joseph, Emmeric Tanghe, Luc Martens, Davy Gaillot, M. Lienard, Jose-Maria Molina-Garcia-Pardo, Maria-Teresa Martinez-Ingles

The electromagnetic reverberation time characteristics are investigated at UltraWide Band (UWB) frequencies, i.e., from 2 to 10 GHz. The reverberation time is bandwidth independent and decreases as the frequency increases. Besides, the reverberation ratio - the contribution of the diffuse fields in...

2014 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, AP-S/URSI 2014, Jul 2014, Memphis, TN, United States. pp.1181-1182, ⟨10.1109/APS.2014.6904917⟩. ⟨hal-03346231⟩

  • Communication dans un congrès

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin, A. Benzeghda

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is...

International Conference on Renewable Energies and Power Quality, ICREPQ'14, 2014, Córdoba, Spain. paper 534, 5 p., ⟨10.24084/repqj12.534⟩. ⟨hal-00955226⟩

  • Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D...

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩