Publicaciones

• Article dans une revue

High frequency acoustic for nanostructures wetting characterization

Sizhe Li, Sébastien Lamant, Julien Carlier, Malika Toubal, Pierre Campistron, Xiumei Xu, Guy Vereecke, Vincent Senez, V. Thomy, Bertrand Nongaillard

Nanostructure wetting is a key problem when developing superhydrophobic surfaces. Conventional methods do not allow us to draw conclusions about the partial or complete wetting of structures on the nanoscale. Moreover, advanced techniques are not always compatible with an in situ, real time,...

Langmuir, 2014, 30, pp.7601-7608. ⟨10.1021/la5013395⟩. ⟨hal-01044827⟩

• Communication dans un congrès

Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster)

Mireille Cuniot-Ponsard, Irma Saraswati, Suk-Min Ko, Mathieu Halbwax, Yong-Hoon Cho, El Hadj Dogheche

We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.

Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. ⟨hal-00975792⟩

• Article dans une revue

Bragg band gaps tunability in an homogeneous piezoelectric rod with periodic electrical boundary conditions

Sébastien Degraeve, Christian Granger, Bertrand Dubus, Jerome O. Vasseur, Mai Pham Thi, Anne-Christine Hladky

An homogeneous piezoelectric rod is shown to exhibit Bragg band gaps when an electrical boundary condition is applied periodically with the help of metallic electrodes. An analytical model is developed which formulation depends on the applied electric boundary condition and reveals that Bragg band...

Journal of Applied Physics, 2014, 115, 194508, 8 p. ⟨10.1063/1.4876757⟩. ⟨hal-00995265⟩

• Communication dans un congrès

Description statistique du comportement de la fonction de Green dans un milieu réverbérant : applications à la localisation de source

Hossep Achdjian, Emmanuel Moulin, Farouk Benmeddour, Jamal Assaad

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. Session APUG1 : Acoustique physique et propagation, papier CFA2014/187, 46-51. ⟨hal-00978409⟩

• Article dans une revue

Low work function thin film growth for high efficiency thermionic energy converter : coupled Kelvin probe and photoemission study of potassium oxide

François Morini, Emmanuel Dubois, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki

Recent researches in thermal energy harvesting have revealed the remarkable efficiency of thermionic energy converters comprising very low work function electrodes. From room temperature and above, this kind of converter could supply low power devices such as autonomous sensor networks. In this...

Physica Status Solidi A (applications and materials science), 2014, 211 (6), pp.1334-1337. ⟨10.1002/pssa.201300136⟩. ⟨hal-01005619⟩

• Communication dans un congrès

Enhanced efficiency by the effect of strain on the structure of a solar cell

Abdelkader Aissat, Rachid Bestam, M. El Bey, Jean-Pierre Vilcot

This paper is expected at the study of Ga1-xInxP/GaAs based solar cell. The effects of indium concentration, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the Ga1-xInxP/GaAs structure were investigated. We noticed that for higher...

International Conference on Technologies and Materials for Renewable Energy, Environment and Sustainability, TMREES14, 2014, Beirut, Lebanon. pp.817-823, ⟨10.1016/j.egypro.2014.06.100⟩. ⟨hal-01055040⟩

• Communication dans un congrès

[Invited] High frequency electronic devices : impact of beyond graphene materials

Henri Happy, D. Mele, Ivy Colambo, Mohamed Salah Khenissa, Mohamed Moez Belhaj, Emiliano Pallecchi, Abdelkarim Ouerghi, Dominique Vignaud, Gilles Dambrine

Considering graphene field effect transistors (GFETs), considerable efforts have been made during the recent years to reach impressive current gain cut-off frequency (ft) over 400 GHz. Unfortunately, for these devices, the maximum frequency of oscillation (fmax) remains under 100GHz. This deviation...

62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK - Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications, 2014, Tampa, FL, United States. ⟨hal-01044773⟩

• Communication dans un congrès

Improved wet chemical transfer process to obtain clean high quality graphene

Geetanjali Deokar, Jean-Louis Codron, Emmanuelle Pichonat, Xavier Wallart, Henri Happy, Dominique Vignaud

Graphene growth on metal substrates (Cu, Ni etc.) by catalyzed chemical vapor deposition (CVD) is a highly suitable method for large scale production [1,2]. However, graphene based electronic devices full realization requires a clean and reproducible graphene transfer on non-conducting substrates,...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961392⟩

• Article dans une revue

From 'petal effect' to 'lotus effect' on the highly flexible Silastic S elastomer microstructured using a fluorine based reactive ion etching process

Christophe Frankiewicz, Farzam Zoueshtiagh, Abdelkrim Talbi, Jeremy Streque, Philippe Pernod, Alain Merlen

A fluorine-based reactive ion etching (RIE) process has been applied on a new family of silicone elastomers named 'Silastic S' for the first time. Excellent mechanical properties are the principal advantage of this elastomer. The main objective of this study was (i) to develop a new...

Journal of Micromechanics and Microengineering, 2014, 24 (11), ⟨10.1088/0960-1317/24/11/115008⟩. ⟨hal-03277849⟩

• Article dans une revue

Dielectric relaxation analysis of Pb(Zr_0.54,Ti_0.46)O₃ thin films: electric field dependence

Freddy Ponchel, N. Sama, Denis Remiens, T. Lasri

350 nm-thick Perovskite PbZr0.54Ti0.46O3 (PZT) thin films were deposited on Al2O3 substrates by sputtering with and without an additional 10-nm-thick TiOx buffer layer. X-ray diffraction patterns showed that in presence of TiOx buffer layer, PZT film was highly oriented along the (111) direction...