Publicaciones

• Article dans une revue

In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

Issam Hasnaoui, Alexandre Pottrain, Thomas Lacave, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull...

Electronics Letters, 2014, 50, pp.1070-1072. ⟨10.1049/el.2014.0186⟩. ⟨hal-01055077⟩

• Communication dans un congrès

Impact of spacing between array elements on the performances of diversity schemes in tunnels

M. Lienard, Jose-Maria Molina-Garcia-Pardo, C. Sanchis-Borras, Pierre Degauque

To increase channel capacity in tunnels, MIMO seems to be a promising technique despite the low angular spread of the rays. Indeed, for transmitting frequencies on the order or larger than 1 GHz, the tunnel behaves as an oversized waveguide and the concept of spatial diversity can be replaced by...

18th International Conference on Circuits, Systems, Communications and Computers, CSCC 2014, 2014, Santorini Island, Greece. pp.30-33. ⟨hal-01055044⟩

• Communication dans un congrès

Simulation and comparative study of graphene field effect transistor using ISE TCAD

B. Hafsi, A. Boubaker, N. Ismail, A. Kalboussi, Dominique Vuillaume, Kamal Lmimouni

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055036⟩

• Article dans une revue

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Yvon Cordier, Éric Frayssinet, Magdalena Chmielowska, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, P. de Mierry, Sebastien Chenot, Julien Camus, Keltouma Aït Aïssa, Quentin Simon, Laurent Le Brizoual, Mohamed Abdou Djouadi, N. Defrance, Marie Lesecq, Philippe Altuntas, Adrien Cutivet, Alain Agboton, Jean-Claude de Jaeger

In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based...

Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (3-4), pp.498-501. ⟨10.1002/pssc.201300453⟩. ⟨hal-00966112⟩

• Autre publication scientifique

Etude et implémentation d'une architecture temps réel pour l'optimisation de la compression H.264/AVC de vidéos SD/HD

Eloïse Vidal

2014. ⟨hal-00971712⟩

• Communication dans un congrès

3D micro-supercapacitor based on MnO2 electrodes on silicon substrate

Etienne Eustache, Camille Douard, Pascal Tilmant, Dmitri Yarekha, Laurence Morgenroth, Christophe Lethien, Thierry Brousse

226th Meeting of the Electrochemical Society and XXIX Congreso de la Sociedad Mexicana de Electroquímica, 2014 ECS and SMEQ Joint International Meeting, 2014, Cancun, Mexico. ⟨hal-01015285⟩

• Article dans une revue

Optical properties of gallium nitride heterostructures grown on silicon for waveguiding application

Irma Saraswati, Arnaud Stolz, S. Ko, El Hadj Dogheche, Nji Raden Poespawati, Retno Wigajatri, Didier Decoster

Gallium nitride (GaN) on silicon (Si) is governed by the possibility to use this family of semiconductor for novel optoelectronic devices. GaN layers are deposited by MOCVD on silicon Si (111) using AlGaN buffer layer. We have studied the microstructure quality of the films. From SEM, TEM and AFM...

Advanced Materials Research, 2014, 980, pp.41-45. ⟨10.4028/www.scientific.net/AMR.980.41⟩. ⟨hal-01020484⟩

• Communication dans un congrès

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

Philippe Altuntas, N. Defrance, Marie Lesecq, Alain Agboton, Rezki Ouhachi, Etienne Okada, Christophe Gaquière, Jean-Claude de Jaeger, Éric Frayssinet, Yvon Cordier

This paper reports on the kink effect observed in InAlN/GaN high electron mobility transistors. Electrical characterizations were carried out to point out the influence of this phenomenon on transistor behaviour. It is demonstrated that the kink effect is directly correlated to shallow traps...

9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.88-91, ⟨10.1109/EuMIC.2014.6997798⟩. ⟨hal-03276914⟩

• Article dans une revue

Synthesis and electrical conductivity of multilayer silicene

Patrick Vogt, Pierre Capiod, Maxime Berthe, Andrea Resta, Paola de Padova, Thomas Brühne, Guy Le Lay, B. Grandidier

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces...

Applied Physics Letters, 2014, 104 (2), 021602, 5 p. ⟨10.1063/1.4861857⟩. ⟨hal-00934419⟩

• Article dans une revue

Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

Katir Ziouche, G. Savelli, Zahia Bougrioua, D. Hauser, P. Lejeune, P.M. Michon, Tuami Lasri, Didier Leclercq

This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (μSIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a...

Journal of Applied Physics, 2014, 116 (4), 043701, 7 p. ⟨10.1063/1.4891020⟩. ⟨hal-01055042⟩