Publicaciones

Affichage de 6701 à 6710 sur 16120


  • Ouvrages

Lazare and Sadi Carnot. A Scientific and Filial Relationship. 2nd ed

Charles C. Gillispie, Raffaele Pisano

Springer, 2014, 978-94-017-8010-0. ⟨hal-04515864⟩

  • Proceedings/Recueil des communications

Note su Scienza e Tecnica (Notes on Science and Technique)

Raffaele Pisano, Danilo Capecchi

Proceedings of 27th and 29th annual SISFA Conferences Societá Italiana degli Storici della Fisica e dell'Astronomia, Aracne, pp.115-124, 2014, 978-88-548-7206-6. ⟨10.4399/978885487206610⟩. ⟨hal-04512964⟩

  • Chapitre d'ouvrage

Preface. A Brief History of a Concept (Agamenon Oliveira's Author) [Preface]

Raffaele Pisano

A History of the Work Concept, Springer International Publishing, pp.v-vi, 2014, 978-94-007-7704-0. ⟨10.1007/978-3-031-12195-1⟩. ⟨hal-04509483⟩

  • N°spécial de revue/special issue

[Editorial] Beamforming techniques for wireless MIMO relay networks

Athanasios G. Kanatas, Demosthenes Vouyioukas, Gan Zheng, Laurent Clavier

International Journal of Antennas and Propagation, 2014, Special Issue on Beamforming techniques for wireless MIMO relay networks, ⟨10.1155/2014/354714⟩. ⟨hal-01059856⟩

  • Article dans une revue

A one-dimensional optomechanical crystal with a complete phononic band gap

J. Gomis-Bresco, D. Navarro-Urrios, M. Oudich, Said El-Jallal, A. Griol, D. Puerto, E. Chavez, Yan Pennec, Bahram Djafari-Rouhani, F. Alzina, A. Martínez, C.M. Sotomayor Torres

Recent years have witnessed the boom of cavity optomechanics, which exploits the confinement and coupling of optical and mechanical waves at the nanoscale. Among their physical implementations, optomechanical (OM) crystals built on semiconductor slabs enable the integration and manipulation of...

Nature Communications, 2014, 5, pp.4452. ⟨10.1038/ncomms5452⟩. ⟨hal-01054998⟩

  • Article dans une revue

100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications

Cyrille Gardès, Sonia Bagumako, L. Desplanque, Nicolas Wichmann, S. Bollaert, Francois Danneville, Xavier Wallart, Yannick Roelens

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies of 100/125 GHz together with minimum noise figure dB and associated gain dB at 12 GHz have...

SCIENTIFIC WORLD JOURNAL, 2014, 2014, 136340, 6 p. ⟨10.1155/2014/136340⟩. ⟨hal-00969148⟩

  • Communication dans un congrès

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin, A. Benzeghda

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is...

International Conference on Renewable Energies and Power Quality, ICREPQ'14, 2014, Córdoba, Spain. paper 534, 5 p., ⟨10.24084/repqj12.534⟩. ⟨hal-00955226⟩