Publicaciones

Affichage de 6741 à 6750 sur 16175


  • Communication dans un congrès

[Invited] A microwave induced remote afterglow reactor for the deposition of organosilicon plasma polymers

Garrett Curley

Workshop on Nanoscale Processing for MEMS and NEMS, 2014, Villeneuve d'Ascq, France. ⟨hal-00976623⟩

  • Communication dans un congrès

Theoretical and experimental investigation of Lamb waves characteristics in AlN/TiN and AlN/TiN/NCD composite membranes

Ali Soltani, Abdelkrim Talbi, J-C Gerbedoen, Jean-Claude de Jaeger, Philippe Pernod, V. Mortet, A. Bassam

In this study, we present a theoretical and experimental investigations of the zero order quasi-symmetric (S0) Lamb waves mode propagating in AlN/TiN and AlN/TiN/NCD composite membranes. Theoretical analysis of S0 mode characteristics shows that The AlN/TiN membrane enables to achieve smooth...

IEEE International Ultrasonics Symposium (IUS), Sep 2014, Chicago, United States. pp.2047-2050, ⟨10.1109/ULTSYM.2014.0510⟩. ⟨hal-03276910⟩

  • Communication dans un congrès

UWB System Based on the M-OAM Modulation in IEEE.802.15.3a Channel

Khadija Hamidoun, Raja Elassali, Yassin El Hillali, Khalid Elbaamrani, Atika Rivenq, F. Elbahhar

Known for many years but unexploited in the field of communications, ultra wideband systems (UWB) can be a solution to the saturation of the frequency bands. The advantage of such systems is that they are inexpensive in energy because of the limitations imposed by the standard. Our work is to...

5th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2014, Costa de Caparica, Portugal. pp.507-514, ⟨10.1007/978-3-642-54734-8_56⟩. ⟨hal-01274817⟩

  • Communication dans un congrès

Electrooptic and converse-piezoelectric properties of epitaxial GaN/Si structures for optoelectronic applications

Mireille Cuniot-Ponsard, Irma Saraswati, S.-M. Ko, Mathieu Halbwax, Y.-H. Cho, N.-R. Poespawati, El Hadj Dogheche

In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer made of (Al, Ga) N intermediate layers [1]. Structural properties of GaN...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, May 2014, Lille, France. ⟨hal-00961405⟩

  • Communication dans un congrès

[Invited] Millimeter-wave noise and power characterization using in situ tuner

Thomas Quemerais, Daniel Gloria, Sandrine Oeuvrard, Christophe Gaquière, Francois Danneville, Gilles Dambrine, Marina Deng

The advanced micro-and nano-technologies now allows the design of high frequencies integrated circuit with transistors operating at millimeter-wave (MMW) frequencies and beyond. This evolution led us to develop industrial test tools to characterize and validate the models of these transistors....

62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WMI - Challenges and advances in wafer-level calibration and characterization of millimeter and sub-millimeter wave devices and systems, 2014, Tampa, FL, United States. ⟨hal-01044780⟩

  • Communication dans un congrès

Nonlinear measurement dedicated to non periodic pulse train for radar power amplifier characterization

Vincent Bridier, Damien Ducatteau, M. Olivier, Hans-Joachim Simon, François Graux, Philippe Eudeline, Gilles Dambrine

A six port mixer based 20GHz nonlinear vector network analyzer (NVNA) dedicated to the characterization of radar power amplifier driven by non periodic pulsed signal is proposed. For the first time a mixer based NVNA is able to measure the fundamental and two harmonics simultaneously while using...

62nd IEEE MTT-S International Microwave Symposium, IMS 2014, 2014, Tampa, FL, United States. paper THP-26, 4 p., ⟨10.1109/MWSYM.2014.6848400⟩. ⟨hal-01044723⟩