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Affichage de 6761 à 6770 sur 16174

Article dans une revue

100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications

Cyrille Gardès, Sonia Bagumako, L. Desplanque, Nicolas Wichmann, S. Bollaert, Francois Danneville, Xavier Wallart, Yannick Roelens

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies of 100/125 GHz together with minimum noise figure dB and associated gain dB at 12 GHz have...

SCIENTIFIC WORLD JOURNAL, 2014, 2014, 136340, 6 p. ⟨10.1155/2014/136340⟩. ⟨hal-00969148⟩

Communication dans un congrès

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin, A. Benzeghda

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is...

International Conference on Renewable Energies and Power Quality, ICREPQ'14, 2014, Córdoba, Spain. paper 534, 5 p., ⟨10.24084/repqj12.534⟩. ⟨hal-00955226⟩

Article dans une revue

Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

Katir Ziouche, G. Savelli, Zahia Bougrioua, D. Hauser, P. Lejeune, P.M. Michon, Tuami Lasri, Didier Leclercq

This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (μSIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a...

Journal of Applied Physics, 2014, 116 (4), 043701, 7 p. ⟨10.1063/1.4891020⟩. ⟨hal-01055042⟩

Article dans une revue

Electrical and Chemical studies on Al2O3 passivation activation process

M. Pawlik, J-P. Vilcot, M. Halbwax, D. Aureau, A. Etcheberry, A. Slaoui, T. Schutz-Kuchly, R. Cabal

Al2O3 deposited using Atomic layer Deposition (ALD) technique is known as an excellent material for p-type silicon surface passivation. However a post-deposition annealing step is needed to make the passivation effective. Thanks to coupled electrical measurements (capacitance and photoconductance)...

Energy Procedia, 2014, 60 (C), pp.85-89. ⟨10.1016/j.egypro.2014.12.347⟩. ⟨hal-05416094⟩

Article dans une revue

Biostimulation as an attractive technique to reduce phenanthrene toxicity for meiofauna and bacteria in lagoon sediment

Haithem Louati, O.B. Said, A. Soltani, P. Got, Cristiana Cravo-Laureau, Robert Duran, P. Aissa, O. Pringault, E. Mahmoudi

A microcosm experiment was setup to examine (1) the effect of phenanthrene contamination on meiofauna and bacteria communities and (2) the effects of different bioremediation strategies on phenanthrene degradation and on the community structure of free-living marine nematodes. Sediments from...

Environmental Science and Pollution Research, 2014, 21 (5), pp.3670-3679. ⟨10.1007/s11356-013-2330-5⟩. ⟨hal-01631850⟩

Article dans une revue

Near-self-imaging cavity for three-mode optoacoustic parametric amplifiers using silicon microresonators

J. Liu, F. A. Torres, Y. Ma, C. Zhao, L. Ju, D. G. Blair, S. Chao, I. Roch-Jeune, R. Flaminio, C. Michel, K.Y. Liu

Three-mode optoacoustic parametric amplifiers (OAPAs), in which a pair of photon modes are strongly coupled to an acoustic mode, provide a general platform for investigating self-cooling, parametric instability and very sensitive transducers. Their realization requires an optical cavity with...

Applied optics, 2014, 53, pp.841-849. ⟨10.1364/AO.53.000841⟩. ⟨hal-00966071⟩

Communication dans un congrès

From semiconductor nanocrystals to artificial graphene and topological insulator

Efterpi Kalesaki, Christophe Delerue, Cristiane Morais Smith, Wouter Beugeling, Guy Allan, Daniel Vanmaekelbergh

Recent advancements in colloidal chemistry indicate that two-dimensional single-crystalline sheets of semiconductors forming a honeycomb lattice can be synthesized from semiconductor nanocrystals [1]. We perform atomistic tight-binding calculations of the band structure of CdSe sheets with such a...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France. ⟨hal-00966143⟩

Communication dans un congrès

Theory of self-assembled nanoparticle networks as logic building blocks

Fabrizio Cleri, Sergio Carrillo, Christophe Krzeminski

Recently, self-assembled networks of functionalized nano particles (NPSAN) were proposed as a prototype of innovative devices [1], with switchable NP-NP links. Thanks to the chemical properties of the surface molecules, these would ultimately show memristive behaviour, as building blocks of a...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium S - Memristormaterials, mechanisms and devices for unconventional computing, 2014, Lille, France. ⟨hal-00966154⟩

Communication dans un congrès

Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster)

Mireille Cuniot-Ponsard, Irma Saraswati, Suk-Min Ko, Mathieu Halbwax, Yong-Hoon Cho, El Hadj Dogheche

We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.

Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. ⟨hal-00975792⟩

Article dans une revue

1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically...

Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩