Henri Happy, D. Mele, Ivy Colambo, Mohamed Salah Khenissa, Mohamed Moez Belhaj, Emiliano Pallecchi, Abdelkarim Ouerghi, Dominique Vignaud, Gilles Dambrine

Considering graphene field effect transistors (GFETs), considerable efforts have been made during the recent years to reach impressive current gain cut-off frequency (ft) over 400 GHz. Unfortunately, for these devices, the maximum frequency of oscillation (fmax) remains under 100GHz. This deviation...

62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK - Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications, 2014, Tampa, FL, United States. ⟨hal-01044773⟩

Communication dans un congrès

[Invited] Surface science of semiconductor nanowires

B. Grandidier

International Nano-Optoelectronic Workshop, iNOW 2014, 2014, St. Petersburg, Russia. ⟨hal-01044671⟩

Article dans une revue

A MIMO random channel generator for indoor power-line communication

Kassim Khalil, Marc G. Gazalet, Patrick Corlay, François-Xavier Coudoux, M Gharbi

Multiple-input multiple-output (MIMO) technology has already been used in power-line communication (PLC). An accurate description of MIMO channels for PLC network topologies is of great interest and importance in the development and testing of digital communication algorithms. However, the...

IEEE Transactions on Power Delivery, 2014, 29 (4), pp.1561-1568. ⟨10.1109/TPWRD.2014.2331078⟩. ⟨hal-01044804⟩

Article dans une revue

Effect of thickness and deposition rate on the structural and magnetic properties of evaporated Fe/Al thin films

M. Mebarki, A. Layadi, L. Kerkache, A. Benabbas, Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod

We report experimental results on the structural and magnetic properties of Fe thin films deposited by thermal evaporation onto polycrystalline Al substrates. The effect of thickness t (in the 76 to 431 nm range) and deposition rate are investigated. The texture, the strain, and the grain size...

Journal of Superconductivity and Novel Magnetism, 2014, 27, pp.1951-1957. ⟨10.1007/s10948-014-2552-x⟩. ⟨hal-01044835⟩

Article dans une revue

Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition

Mireille Cuniot-Ponsard, Irma Saraswati, S.M. Ko, Mathieu Halbwax, Y.H. Cho, El Hadj Dogheche

We report the measurement of the (r13, r33) Pockels electro-optic coefficients in a GaN thin film grown on a Si(111) substrate. The converse piezoelectric (d33) and electro-absorptive coefficients are simultaneously determined. Single crystalline GaN epitaxial layers were grown with a AlGaN buffer...

Applied Physics Letters, 2014, 104, 101908, 4 p. ⟨10.1063/1.4868427⟩. ⟨hal-00964286⟩

Communication dans un congrès

Experimentation and modeling of node energy consumption in wireless sensor networks

Román Igual-Pérez, Alexandre Boé, Nathalie Rolland, Laurent Clavier

Wireless sensor networks could be widely used in a large variety of applications such as smart cities, structural health monitoring. However, their large scale deployment is limited by the lifetime of the nodes. A joint optimization of both hardware and software is a promising solution to decrease...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01018401⟩

Communication dans un congrès

Caractérisation quantitative des capacités sous échelle de 10 nm avec un interférométrique scanning-microwave-microscopy

Fei Wang, Nicolas Clément, Damien Ducatteau, David Troadec, Bernard Legrand, Gilles Dambrine, Didier Theron

Nous présentons une façon de caractériser quantitativement des capacités sous échelle de 10 nm à l'aide d'un scanning-microwave-microscope modifié avec un interféromètre (iSMM). Des milliers de capacités à l'échelle nanométrique (nanoplots) et un kit de capacités de calibrages sont...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018379⟩

Article dans une revue

Millimeter-wave in situ tuner : an efficient solution to extract the noise parameters of SiGe HBTs in the whole 130-170 GHz range

Marina Deng, Laurent Poulain, Daniel Gloria, Thomas Quémerais, Pascal Chevalier, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine

SiGe HBT noise parameters ( , and ) are for the first time extracted in the entire 130 - 170 GHz frequency range. This achievement is realized using a D-band on-chip source-pull system, which includes an impedance tuner integrated with the transistor under test. On-wafer noise power measurements on...

IEEE Microwave and Wireless Components Letters, 2014, 24, pp.649-651. ⟨10.1109/LMWC.2014.2331762⟩. ⟨hal-01059836⟩