Publicaciones

Affichage de 6791 à 6800 sur 16075


  • Communication dans un congrès

[Invité] Oxydes fonctionnels pour les mémoires résistives : du matériau au composant

F. Alibart

Journées Nationales du GdR OXYFUN " Oxydes fonctionnels : du matériau au dispositif ", 2014, Autrans, France. ⟨hal-01055002⟩

  • Communication dans un congrès

[Invited] A phoxonic crystal : photonic and phononic bandgaps in a 1D optomechanical crystal

Jordi Gomis-Bresco, Daniel Navarro-Urrios, Mourad Oudich, Said El-Jallal, Amadeu Griol, Daniel Puerto, Emigdio Chavez, Yan Pennec, Bahram Djafari-Rouhani, Francesc Alzina, Alejandro Martínez, C.M. Sotomayor Torres

Recent years have witnessed the increase of interest in cavity optomechanics, which exploits the confinement and coupling of optical waves and mechanical vibrations at the nanoscale. Amongst the different physical implementations, optomechanical (OM) crystals built on semiconductor slabs would...

16th International Conference on Transparent Optical Networks, ICTON 2014, 2014, Graz, Austria. paper We.D6.4, 4 p., ⟨10.1109/ICTON.2014.6876627⟩. ⟨hal-01056950⟩

  • Communication dans un congrès

A fast and functional technique for the noise figure measurement of differential amplifiers

Yogadissen Andee, Jérôme Prouvée, François Graux, Francois Danneville

This paper presents an original technique to measure the noise figure of differential amplifiers with a four-port network analyzer. The approach is fast and simple as the S-parameters and the output noise powers are measured directly with the analyzer. There is no need of hybrid couplers or baluns...

10th Conference on PhD Research in Microelectronics and Electronics, PRIME 2014, 2014, Grenoble, France. 4 p., ⟨10.1109/PRIME.2014.6872691⟩. ⟨hal-01056957⟩

  • Article dans une revue

RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor

Francois Danneville, Laurent Poulain, Yoann Tagro, Sylvie Lepilliet, Benjamin Dormieu, Daniel Gloria, P. Scheer, Gilles Dambrine

In order to pursue Moore's law, material engineering has constituted a real focus during the last decade. In particular, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-k/MG) for CMOS was a key point to downscale the 'Equivalent Oxide Thickness'....

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2014, 27, pp.736-747. ⟨10.1002/jnm.1972⟩. ⟨hal-01058062⟩

  • Communication dans un congrès

Key parameters of silicon micropillar arrays for solar cell performance optimization

Di Zhou, Yan Pennec, Bahram Djafari-Rouhani, Odile Cristini, Tao Xu, Yannick Lambert, Didier Stiévenard

Surface nanostructuration is an important challenge for the optimization of light trapping design in solar cell. We present simulations of the optical properties and efficiency of nanostructured (micropilars-MPs- or nanocones-NCs-) silicon based solar cells as well as measurements of their optical...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014, Lille, France. ⟨hal-00964078⟩

  • Article dans une revue

0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz

Mohammed Zaknoune, Etienne Okada, Estelle Mairiaux, Yannick Roelens, Damien Ducatteau, Peter Frijlink, Marc Rocchi, Hassan Maher

We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm2. Biased for highest power added efficiency (PAE), an output power of 6.62 mW/μm2 (11 dBm), a power gain of 5.2 dB, and...

IEEE Electron Device Letters, 2014, 35 (3), pp.321-323. ⟨10.1109/LED.2014.2298251⟩. ⟨hal-00955679⟩