Publicaciones

• Communication dans un congrès

Epitaxial growth of MgO tunnel barrier on epitaxial graphene

Florian Godel, Emmanuelle Pichonat, Dominique Vignaud, Hicham Majjad, Dominik Metten, Yves Henry, Stéphane Berciaud, Jean-François Dayen, David Halley

7th CNRS-EWHA Winter School 2014, 2014, Strasbourg, France. ⟨hal-01055000⟩

• Article dans une revue

Interface dipole : effects on threshold voltage and mobility for both amorphous and poly-crystalline organic field effect transistors

C. Celle, C. Suspène, M. Ternisien, S. Lenfant, David Guérin, K. Smaali, K. Lmimouni, J.P. Simonato, Dominique Vuillaume

We report a detailed comparison on the role of a self-assembled monolayer (SAM) of dipolar molecules on the threshold voltage and charge carrier mobility of organic field-effect transistor (OFET) made of both amorphous and polycrystalline organic semiconductors. We show that the same relationship...

Organic Electronics, 2014, 15, pp.729-737. ⟨10.1016/j.orgel.2014.01.003⟩. ⟨hal-00939052⟩

• Communication dans un congrès

Theoretical and experimental investigation of Lamb waves characteristics in AlN/TiN and AlN/TiN/NCD composite membranes

Ali Soltani, Abdelkrim Talbi, J-C Gerbedoen, Jean-Claude de Jaeger, Philippe Pernod, V. Mortet, A. Bassam

In this study, we present a theoretical and experimental investigations of the zero order quasi-symmetric (S0) Lamb waves mode propagating in AlN/TiN and AlN/TiN/NCD composite membranes. Theoretical analysis of S0 mode characteristics shows that The AlN/TiN membrane enables to achieve smooth...

IEEE International Ultrasonics Symposium (IUS), Sep 2014, Chicago, United States. pp.2047-2050, ⟨10.1109/ULTSYM.2014.0510⟩. ⟨hal-03276910⟩

• Article dans une revue

Modeling and simulation of AlxGayIn1-x-yAs/InP quaternary structure for photovoltaic

Abdelkader Aissat, M. El Bey, Rachid Bestam, Jean-Pierre Vilcot

In this work, we have studied solar cells based on AlGaInAs/InP quaternary structure to describe the behavior of electronics components. To this end, we have developed a simulation program to study the gallium Ga and aluminum Al concentrations effect on respectively the lattice mismatch, the band...

International Journal of Hydrogen Energy, 2014, 39, pp.15287-15291. ⟨10.1016/j.ijhydene.2014.04.162⟩. ⟨hal-01058063⟩

• Article dans une revue

Narrow linewidth tunable terahertz radiation by photomixing without servo-locking

Antoine Rolland, Guillaume Ducournau, Gwennaël Danion, Goulc'Hen Loas, Marc Brunel, Alexandre Beck, Fabio Pavanello, Emilien Peytavit, Tashin Akalin, Mohammed Zaknoune, Jean-Francois Lampin, François Bondu, Marc Vallet, Pascal Szriftgiser, Denis Bacquet, Mehdi Alouini

A beatnote, tunable from dc to 1 THz, provided by a dual-frequency laser is used to feed an unitravelling carrier photodiode in order to produce a highly coherent THz signal radiated by a transverse-electromagnetic-horn antenna. The THz signal is detected and analyzed by a subharmonic mixer coupled...

IEEE Transactions on Terahertz Science and Technology, 2014, 4 (2), pp.260-266. ⟨10.1109/TTHZ.2013.2296144⟩. ⟨hal-00941862⟩

• Communication dans un congrès

Characterization of multi-layered nanopore structure

Xiaokun Ding, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensly, Yujun Song, Alexey Klimov

Hybridization of nanostructures opens new avenues for the synthesis of nano-architectures with multi-function and novel physicochemical properties. In this paper, we developed nanosphere template assisted physical vapor deposition to fabricate ordered multi-layered nanostructures utilizing Ag/...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020258⟩

• Communication dans un congrès

Antennes patch enfouies dans le béton

Amal Abbadi

L'objectif de ces travaux est de mener des recherches sur l'utilisation des technologies sans contact pour instrumenter les ouvrages de génie civil. Les recherches comportent des développements scientifiques visant à bien comprendre le fonctionnement de cette technologie dans un milieu...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01018406⟩

• Communication dans un congrès

Band gap formation and elastic wave transmission in two-dimentional surface phononic crystal

Sergey Yankin, Abdelkrim Talbi, Yu Du, Jean-Claude Gerbedoen, Vladimir Preobrazhensky, Philippe Pernod, Olivier Bou Matar

Using finite element method analysis of surface acoustic wave (SAW) propagation in the phononic crystal in a form of periodic lattice from nickel pillars, located on a piezoelectric substrate of Y+128°-cut LiNbO3, has been conducted. Amplitude and phase characteristics of SAW propagation through...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01018435⟩

• Communication dans un congrès

Image and many-body effects in ultra-thin gate insulator MOSFET with In0.53Ga0.47As channel material and their influence on gate leakage current

Gabriel Mugny, D. Rideau, F. Triozon, Yann-Michel Niquet, F.G. Pereira, A. Soussou, I. Duchemin, D. Garetto, C. Tavernier, H. Jaouen, Christophe Delerue

We study the influence of many-body and image force corrections on charge distribution, threshold voltage and tunnel current in fully-depleted silicon-on-insulator (FDSOI) ultra-thin gate insulator MOSFETs. We show that image correction slightly increases threshold voltage in Si MOSFETs and that...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 5 p. ⟨hal-01020291⟩

• Communication dans un congrès

Electrooptic and converse-piezoelectric properties of epitaxial GaN/Si structures for optoelectronic applications

Mireille Cuniot-Ponsard, Irma Saraswati, S.-M. Ko, Mathieu Halbwax, Y.-H. Cho, N.-R. Poespawati, El Hadj Dogheche

In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer made of (Al, Ga) N intermediate layers [1]. Structural properties of GaN...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, May 2014, Lille, France. ⟨hal-00961405⟩