Publicaciones

Affichage de 6981 à 6990 sur 16177


  • Communication dans un congrès

Efficient reduction of thermal conductivity in silicon using phononic-engineered membranes

Valeria Lacatena, Maciej Haras, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki, Emmanuel Dubois

Phononic crystals (PC) have been a remarkably active research field for more than two decades [1]. The principle of Bragg reflection on an artificial crystal-like structure leading to additional spectral (band gaps) and refractive (negative refraction, anisotropy) properties is scalable in any...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00964542⟩

  • Communication dans un congrès

Bande interdite de Bragg d'origine électrique dans les cristaux phononiques piezoelectriques à une dimension

Bertrand Dubus, Sébastien Degraeve, Christian Granger, Jerome O. Vasseur, M. Pham Thi, Anne-Christine Hladky

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. pp.Session APUS1 : Acoustique Ultrasonore, CFA2014/334, 1250-1253. ⟨hal-00978384⟩

  • Proceedings/Recueil des communications

Mechanics, Science & Society in the Renaissance: What Tradition?

Raffaele Pisano, Paolo Bussotti

  • Communication dans un congrès

Design and fabrication of uni-travelling carrier (UTC) photodiode based on InxGa1-xN semiconductors

Bandar Alshehri, Karim Dogheche, P.I. Seetoh, J.H. Teng, S.J. Chua, Didier Decoster, El Hadj Dogheche

This work is focused both on InxGa1-xN single-layer and InxGa1-xN/GaN multilayered structures, with high Indium content (x>35%). In this study, InGaN/GaN films are epitaxially grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The microstructure of GaN and InxGa1-xN...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961396⟩

  • Communication dans un congrès

Modeling of GaN Schottky diodes

Chong Jin, Etienne Okada, Marc Faucher, Damien Ducatteau, Mohamed Zaknoune, Dimitris Pavlidis

GaN-based Schottky diodes for microwave, millimeter-wave power applications were characterized and modeled. The modeling technique employed dummy structure to derive parasitic elements introduced by access pads. Intrinsic elements were extracted by fitting junction capacitance for fixed grading...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020469⟩

  • Communication dans un congrès

Acoustic analogue of electromagnetic induced transparency in solid-fluid layered materials

El Houssaine El Boudouti, Ilyasse Quotane, Bahram Djafari-Rouhani

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. ⟨hal-01015260⟩

  • Communication dans un congrès

Silicon thermoelectrics : a non-conventional approach based on thin-film phononic engineering

J.F. Robillard, Valeria Lacatena, Maciej Haras, Stéphane Monfray, Thomas Skotnicki, Emmanuel Dubois

CMOS Emerging Technologies Research Symposium, 2014, Grenoble, France. ⟨hal-00976631⟩