Publicaciones

• Communication dans un congrès

Tailoring thermal conductivity of graphene via defect-and-molecular engineering

Stefan Bringuier, J.F. Robillard, Pierre Deymier, Krishna Muralidharan

The exceptional thermal properties of graphene have attracted enormous interest over the past decade. Consequently, there is an increased push towards utilizing graphene in thermal-management systems such as thermal interface materials and thermoelectrics. While, many recent investigations have...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00964528⟩

• Article dans une revue

Limitations of the impulse response of GaAs MSM photoswitch

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin

As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we wondered how this device can be used as a photoswitch as well as the low temperature on GaAs photoconductive generally used for this purpose. The impulse response of interdigitated metal-semiconductor...

International Journal of Advances in Engineering and Technology, 2014, 7, pp.75-81. ⟨hal-00955229⟩

• Article dans une revue

Electrical method for crosstalk cancellation in transducer arrays

Abdelmajid Bybi, Christian Granger, Sébastien Grondel, Anne-Christine Hladky, Jamal Assaad

In this paper, we report a new and simple electrical method to cancel crosstalk in the acoustical arrays. This solution has several advantages compared with that proposed in a previous paper (Bybi et al 2013) [17] where adapted electrical voltages were applied to each neighboring element of the...

NDT & E International, 2014, 62, pp.115-121. ⟨10.1016/j.ndteint.2013.12.003⟩. ⟨hal-00934426⟩

• Communication dans un congrès

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

Philippe Altuntas, N. Defrance, Marie Lesecq, Alain Agboton, Rezki Ouhachi, Etienne Okada, Christophe Gaquière, Jean-Claude de Jaeger, Éric Frayssinet, Yvon Cordier

This paper reports on the kink effect observed in InAlN/GaN high electron mobility transistors. Electrical characterizations were carried out to point out the influence of this phenomenon on transistor behaviour. It is demonstrated that the kink effect is directly correlated to shallow traps...

9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.88-91, ⟨10.1109/EuMIC.2014.6997798⟩. ⟨hal-03276914⟩

• Communication dans un congrès

Inkjet printed flexible transmission lines for high frequency applications up to 67 GHz

Mohamed Moez Belhaj, Wei Wei, Emiliano Pallecchi, Colin Mismer, Isabelle Roch-Jeune, Henri Happy

This letter introduces radio frequency(RF) characterization of ink-jet printed coplanar waveguides (CPW) with and without strain. Kapton is selected as flexible substrate with different sintering temperature. With optimized inkjet printing parameters, well defined patterns with high resolution...

44th European Microwave Conference and 9th European Microwave Integrated Circuits Conference, EuMC/EuMIC 2014, Oct 2014, Rome, Italy. pp.1528-1531, ⟨10.1109/EuMC.2014.6986740⟩. ⟨hal-03335828⟩

• Article dans une revue

Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

Katir Ziouche, G. Savelli, Zahia Bougrioua, D. Hauser, P. Lejeune, P.M. Michon, Tuami Lasri, Didier Leclercq

This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (μSIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a...

Journal of Applied Physics, 2014, 116 (4), 043701, 7 p. ⟨10.1063/1.4891020⟩. ⟨hal-01055042⟩

• Article dans une revue

Miniaturized Microcantilever-based RF Microwave Probes Using MEMS Technologies

Jaouad Marzouk, S. Arscott, Kamel Haddadi, Tuami Lasri, Christophe Boyaval, Sylvie Lepilliet, Gilles Dambrine

In this study, miniaturized microwave cantilever-based probes - using silicon-on-insulator (SOI) technology - are proposed for the on-chip electrical characterization of nanodevices. In contrast with conventional on-wafer probing structures, small pad dimensions around 1 μm2 associated with a 4.5...

Procedia Engineering, 2014, 87, pp.692-695. ⟨10.1016/j.proeng.2014.11.631⟩. ⟨hal-02345626⟩

• Communication dans un congrès

Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy

I. Razado-Colambo, J.P. Nys, X. Wallart, S. Godey, J. Avila, M.C. Asensio, D. Vignaud

4th Graphene Conference, Graphene 2014, 2014, Toulouse, France. 2 p. ⟨hal-00962361⟩

• Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D...

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

• Article dans une revue

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

E. Lefebvre, G. Moschetti, M. Malmkvist, L. Desplanque, X. Wallart, J. Grahn

The fabrication process of InAs/AlSb high electron mobility transistors (HEMTs) has been improved by depositing, after the shallow-mesa isolation of the active area, a thin SiNx-film on the exposed AlGaSb mesa floor. Devices with and without this early-protection against Al(Ga)Sb oxidation have...

Semiconductor Science and Technology, 2014, 29, 035010, 7p. ⟨10.1088/0268-1242/29/3/035010⟩. ⟨hal-00941533⟩