Publicaciones

Affichage de 7071 à 7080 sur 16552


  • Communication dans un congrès

Bulk and surface acoustic waves in solid-fluid Fibonacci layered materials

El Houssaine El Boudouti, Ilyasse Quotane, Bahram Djafari-Rouhani, Youssef El Hassouani, Victor Velasco

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. ⟨hal-01015265⟩

  • Communication dans un congrès

Synthesis and electrical characterisations of a low work function cesium oxide coating for high efficiency thermionic energy converter

François Morini, J.F. Robillard, Stéphane Monfray, I.D. Baikie, Thomas Skotnicki, Emmanuel Dubois

One main challenge associated with solid-state thermoelectric materials is to combine electron-crystal electrical conductivity and phonon-glass thermal properties that are difficult to conciliate. A markedly different principle of thermoelectric conversion is based on the micro-thermionic generator...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium BB - Materials by design for energy applications through theory and experiment, 2014, Lille, France. ⟨hal-00966136⟩

  • Communication dans un congrès

Evolution of Bragg and low frequency gaps in a phononic plate formed by pillars deposited on a drilled plate

Stéphanie Hemon, Yan Pennec, Abdellatif Akjouj, Rayisa Moiseyenko, Bahram Djafari-Rouhani, Bernard Bonello

joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. 2 p. ⟨hal-01015304⟩

  • Communication dans un congrès

Elastic field scattered by a resonator in an acoustic metamaterial

Bernard Bonello, Rémi Marchal, Rayisa P. Moiseyenko, Yan Pennec, Bahram Djafari-Rouhani, J. Zhao, Olga Boyko-Kazymyrenko

Locally resonant sonic materials are artificially structured composites designed to exhibit negative effective mass density and/or elastic constants at frequencies below the Bragg band gap, giving rise to one or several forbidden bands in a frequency range where the elastic wavelength is much...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00964114⟩

  • Communication dans un congrès

Silicon pillars as resonators in an acoustical metamaterial

B. Bonello, R. Marchal, R. Moiseyenko, Yan Pennec, Bahram Djafari-Rouhani, J. Zhao, O. Boyko

We have investigated the propagation of Lamb waves in structures made of either an isolated resonant pillar or a set of pillars arranged in a line on a thin plate. The resonators as well as the plate are made of silicon. FEM computations show that two bending modes and one compressional mode are...

ASME 2014 International Mechanical Engineering Congress and Exposition, IMECE 2014, Nov 2014, Montreal, Canada. ⟨10.1115/IMECE2014-37914⟩. ⟨hal-03508193⟩

  • Communication dans un congrès

Combined photonic-plasmonic modes inside photonic crystal cavities

Abdelali Mrabti, Said El-Jallal, Gaëtan Lévêque, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani

joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. 2 p. ⟨hal-01015279⟩

  • Article dans une revue

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

J.F. Millithaler, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonz Alez, P. Sangaré, Guillaume Ducournau, Christophe Gaquière, J. Mateos

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode....

Applied Physics Letters, 2014, 104, 073509, 4 p. ⟨10.1063/1.4866166⟩. ⟨hal-00951554⟩

  • Communication dans un congrès

Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes

H. Mosbahi, M. Charfeddine, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport properties. Moreover, III-V nitrides could be suitable for the emitters...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961393⟩