Publicaciones

• Communication dans un congrès

Radio frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, D. Gloria, C. Raynaud

8th European Workshop on Silicon on Insulator Technology, Devices and Circuits, EuroSOI 2012, 2012, Montpellier, France. pp.73-78, ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00797713⟩

• Communication dans un congrès

Conformal antenna array for 60 GHz applications

Vasili Semkin, Mikko Kyrö, Veli-Matti Kolmonen, Cyril Luxey, Aimeric Bisognin, Fabien Ferrero, Henri Happy, Antti V. Räisänen

In this work, the design of a millimeter-wave conformal antenna array for cylindrical structure is developed. Antenna array consists of 4x4 elements and operates at 60 GHz. Different substrates and their properties are considered. Fiber Teflon substrate was chosen for the antenna structure due to...

7th European Conference on Antennas and Propagation, EuCAP 2013, 2013, Gothenburg, Sweden. pp.605-608. ⟨hal-00877722⟩

• Article dans une revue

The effects of increasing antenna arrays and spatial correlation on loading algorithm for closed-loop MIMO vehicle-to-infrastructure communications

Imade Fatani, Mohamed Gharbi, François-Xavier Coudoux, Marion Berbineau, Patrick Corlay, Marc G. Gazalet

In this paper, an efficient bit-loading algorithm in the context of SVD-aided MIMO transmission for vehicle-to-infrastructure (V2I) communications is presented. This algorithm, which exploits the intrinsic properties of the eigen-channels resulting from SVD, tries to minimize the error probability...

Lecture Notes in Computer Science, 2013, 7865, pp.107-120. ⟨10.1007/978-3-642-37974-1_9⟩. ⟨hal-00877704⟩

• Article dans une revue

Optimal PWR codes for TH-PPM UWB multiple-access interference mitigation

K. Kouassi, Laurent Clavier, I. Doumbia, P. Rolland

IEEE Communications Letters, 2013, 17, pp.103-106. ⟨10.1109/LCOMM.2012.112812.122204⟩. ⟨hal-00795949⟩

• Article dans une revue

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

G. Moschetti, M. Abbasi, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

Solid-State Electronics, 2013, 79, pp.268-273. ⟨10.1016/j.sse.2012.06.013⟩. ⟨hal-00795944⟩

• Article dans une revue

Recent advances in the development of graphene-based surface plasmon resonance (SPR) interfaces

Sabine Szunerits, N. Maalouli, E. Wijaya, Jean-Pierre Vilcot, Rabah Boukherroub

Analytical and Bioanalytical Chemistry, 2013, 405, pp.1435-1443. ⟨10.1007/s00216-012-6624-0⟩. ⟨hal-00796418⟩

• Communication dans un congrès

Energy efficient adaptive video compression scheme for WVSNs

O. Alaoui Fdili, François-Xavier Coudoux, Y. Fakhri, Patrick Corlay, D. Aboutajdine

21st European Signal Processing Conference, EUSIPCO 2013, 2013, Marrakech, Morocco. USB Proceedings, session WE-L9, 6 p. ⟨hal-00877788⟩

• Communication dans un congrès

AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD

Philippe Altuntas, N. Defrance, Marie Lesecq, Adrien Cutivet, Alain Agboton, Yvon Cordier, Magdalena Chmielowska, Stephanie Rennesson, Julien Camus, Keltouma Aït Aïssa, Laurent Le Brizoual, Mohamed Abdou Djouadi, Jean-Claude de Jaeger

AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic...

22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. paper 5.6, 2 p. ⟨hal-00877773⟩

• Autre publication scientifique

Etude de films minces de CuInS2, CuIn1-xGaxS2, et Cu2ZnSnS4, élaborés par voie sol-gel, destinés aux applications photovoltaïques

Yoan Bourlier

2013. ⟨hal-00825116⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly...

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩