Publicaciones

• Article dans une revue

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

G. Moschetti, M. Abbasi, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

Solid-State Electronics, 2013, 79, pp.268-273. ⟨10.1016/j.sse.2012.06.013⟩. ⟨hal-00795944⟩

• Article dans une revue

Recent advances in the development of graphene-based surface plasmon resonance (SPR) interfaces

Sabine Szunerits, N. Maalouli, E. Wijaya, Jean-Pierre Vilcot, Rabah Boukherroub

Analytical and Bioanalytical Chemistry, 2013, 405, pp.1435-1443. ⟨10.1007/s00216-012-6624-0⟩. ⟨hal-00796418⟩

• Communication dans un congrès

Energy efficient adaptive video compression scheme for WVSNs

O. Alaoui Fdili, François-Xavier Coudoux, Y. Fakhri, Patrick Corlay, D. Aboutajdine

21st European Signal Processing Conference, EUSIPCO 2013, 2013, Marrakech, Morocco. USB Proceedings, session WE-L9, 6 p. ⟨hal-00877788⟩

• Communication dans un congrès

AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD

Philippe Altuntas, N. Defrance, Marie Lesecq, Adrien Cutivet, Alain Agboton, Yvon Cordier, Magdalena Chmielowska, Stephanie Rennesson, Julien Camus, Keltouma Aït Aïssa, Laurent Le Brizoual, Mohamed Abdou Djouadi, Jean-Claude de Jaeger

AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic...

22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. paper 5.6, 2 p. ⟨hal-00877773⟩

• Autre publication scientifique

Etude de films minces de CuInS2, CuIn1-xGaxS2, et Cu2ZnSnS4, élaborés par voie sol-gel, destinés aux applications photovoltaïques

Yoan Bourlier

2013. ⟨hal-00825116⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly...

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩

• Article dans une revue

A 60 GHz transceiver for low power ad hoc networks

Christophe Loyez, Michael Bocquet, N. Rolland

This article presents a low-power consumption architecture of RF transceiver using impulse radio signals operating at 60 GHz. Both intrinsic features and related technologies of this operating frequency are detailed and the specific topology of this communication and geolocalization system is...

Microwave and Optical Technology Letters, 2013, 55, pp.2640-2643. ⟨10.1002/mop.27913⟩. ⟨hal-00871900⟩

• Article dans une revue

Pattern classification by memristive crossbar circuits using ex situ and in situ training

F. Alibart, E. Zamanidoost, D.B. Strukov

Nature Communications, 2013, 4, pp.2072-1-7. ⟨10.1038/ncomms3072⟩. ⟨hal-00871928⟩

• Article dans une revue

Investigation of the anti-biofouling properties of graphene oxide aqueous solutions by electrowetting characterization

G. Perry, Yannick Coffinier, Rabah Boukherroub, V. Thomy

Journal of Materials Chemistry A, 2013, 1, pp.12355-12360. ⟨10.1039/C3TA12576A⟩. ⟨hal-00872093⟩

• Communication dans un congrès

Surfaces absorbantes à base de ferroélectriques

J.P. Hao, Véronique Sadaune, L. Burgnies, Eric Lheurette, D. Lippens

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-TM2-2, 4 p. ⟨hal-00878388⟩