Publicaciones

Affichage de 7291 à 7300 sur 16434


  • Article dans une revue

Modeling light-sound interaction in nanoscale cavities and waveguides

Yan Pennec, Vincent Laude, Nikos Papanikolaou, Bahram Djafari-Rouhani, Mourad Oudich, Said El-Jallal, Jean-Charles Beugnot, José Maria Escalante, Alejandro Martinez

The interaction of light and sound waves at the micro and nanoscale has attracted considerable interest in recent years. The main reason is that this interaction is responsible for a wide variety of intriguing physical phenomena, ranging from the laser-induced cooling of a micromechanical resonator...

Nanophotonics, 2014, 3 (6), pp.413-440. ⟨10.1515/nanoph-2014-0004⟩. ⟨hal-03222009⟩

  • Article dans une revue

0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz

Mohammed Zaknoune, Etienne Okada, Estelle Mairiaux, Yannick Roelens, Damien Ducatteau, Peter Frijlink, Marc Rocchi, Hassan Maher

We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm2. Biased for highest power added efficiency (PAE), an output power of 6.62 mW/μm2 (11 dBm), a power gain of 5.2 dB, and...

IEEE Electron Device Letters, 2014, 35 (3), pp.321-323. ⟨10.1109/LED.2014.2298251⟩. ⟨hal-00955679⟩

  • Article dans une revue

Enhancing LSPR sensitivity of Au gratings through graphene coupling to Au film

Thomas Maurer, Rana Nicolas, Gaëtan Lévêque, P. Subramanian, Julien Proust, Jérémie Béal, Silvere Schuermans, Jean-Pierre Vilcot, Z. Herro, M. Kazan, Jerome Plain, Rabah Boukherroub, Abdellatif Akjouj, Bahram Djafari-Rouhani, Pierre-Michel Adam, Sabine Szunerits

A particular interesting plasmonic system is that of metallic nanostructures interacting with metal films. As the localized surface plasmon resonance (LSPR) behavior of gold nanostructures (Au NPs) on the top of a gold thin film is exquisitely sensitive to the spacer distance of the film-Au NPs, we...

Plasmonics, 2014, 9, pp.507-512. ⟨10.1007/s11468-013-9649-0⟩. ⟨hal-00994804⟩

  • Communication dans un congrès

Phosphorus-hyperdoped Si nanocrystals : a model for localized surface plasmon resonance

X. Pi, Christophe Delerue

It has been recently realized that semiconductor nanocrystals can be doped with point defects or impurities up to a very high level, sometimes above the bulk solubility limit. In parallel, hyperdoping has also emerged as a promising means to change the electrical and optical properties of Si. In...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961394⟩

  • Communication dans un congrès

Croissance localisée d'InAs par épitaxie par jets moléculaires

Maria Fahed, L. Desplanque, Xavier Wallart

Ce travail porte sur l'étude de la croissance localisée d'InAs sur InAs déposé par épitaxie par jets moléculaires (EJM). Nous présentons la caractérisation de la morphologie des surfaces par microscopie électronique à balayage (MEB).

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018426⟩

  • Communication dans un congrès

A 1D optomechanical crystal with a complete phononic band gap

Jordi Gomis-Bresco, Daniel Navarro Urrios, Mourad Oudich, Said El-Jallal, Amadeu Griol, Daniel Puerto, Emigdio Chávez-Ángel, Yan Pennec, Bahram Djafari-Rouhani, Francesc Alzina, Alejandro Martinez, Clivia Sotomayor-Torres

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. ⟨hal-01015239⟩

  • Communication dans un congrès

InAs based Esaki tunnel diodes

Vinay Kumar Chinni, L. Desplanque, Mohamed Zaknoune, Xavier Wallart

We present simulation results of InAs based Esaki tunnel diodes. InAs homojunction and InAs/AlGaSb heterojunction are considered and we investigate the role of source and drain doping levels as well as band energy discontinuities on the tunneling current of the device. The results are very...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018430⟩