Publicaciones

• Article dans une revue

Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Christophe Krzeminski

Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the...

Journal of Applied Physics, 2013, 114, 224501, 9 p. ⟨10.1063/1.4839675⟩. ⟨hal-00917560⟩

• Article dans une revue

Modeling of MEMS resonator piezoelectric disc by means of an equicharge current source method

L. Elmaimouni, F.E. Ratolojanahary, Jean-Etienne Lefebvre, J.G. Yu, A. Raherison, Tadeusz Gryba

Ultrasonics, 2013, 53, pp.1270-1279. ⟨10.1016/j.ultras.2013.03.011⟩. ⟨hal-00877662⟩

• Article dans une revue

Doped semiconductor nanocrystal junctions

Lukasz Borowik, Thuat Nguyen-Tran, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that...

Journal of Applied Physics, 2013, 114, 204305, 5 p. ⟨10.1063/1.4834516⟩. ⟨hal-00941624⟩

• Article dans une revue

Detecting response of microelectromechanical resonators by microwave reflectometry

Bernard Legrand, D. Ducatteau, D. Theron, B. Walter, H. Tanbakuchi

Applied Physics Letters, 2013, 103, pp.053124-1-5. ⟨10.1063/1.4817411⟩. ⟨hal-00871931⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the...

43rd European Solid-State Device Research Conference, ESSDERC 2013, 2013, Bucharest, Romania. pp.57-60, ⟨10.1109/ESSDERC.2013.6818818⟩. ⟨hal-00997378⟩

• Article dans une revue

Metamaterial-inspired bandpass filters for terahertz surface waves on Goubau lines

Ali K. Horestani, Withawat Withayachumnankul, Abdallah Chahadih, Abbas Ghaddar, Mokhtar Zehar, Derek Abbott, Christophe Fumeaux, Tahsin Akalin

This paper is focused on the application of split ring resonators (SRRs) to the design of compact bandpass filters for terahertz surface waves on single-wire waveguides, the so-called planar Goubau lines (PGLs). Through equivalent circuit models, electromagnetic simulations, and experiments, it is...

IEEE Transactions on Terahertz Science and Technology, 2013, 3, pp.851-858. ⟨10.1109/TTHZ.2013.2285556⟩. ⟨hal-00922580⟩

• Chapitre d'ouvrage

Evaluation of damages induced by Ga<su>+</sup> - focused ion beam in piezoelectric nanostructures

A. Ferri, Denis Remiens, R. Desfeux, A. da Costa, D. Deresmes, David Troadec

The impact of Ga+-focused ion beam (FIB) about functional properties of continuous and nanostructured piezoelectric thin films of lead zirconate titanate (Pb(ZrxTi1-x)O3) was investigated. A suitable way to fabricate piezoelectric nanocapacitors was studied, based on the amorphous or crystallized...

• Article dans une revue

Acousto-optic wide band optical low frequency shifter

Anthony Dieulangard, Jean-Claude Kastelik, Samuel Dupont, Joseph Gazalet

A wide bandwidth tunable optical low-frequency shifter is presented in this work. It is based on two acousto-optic devices operating in tandem. The relevant parameters of the specific configurations of acousto-optic interactions in paratellurite material are detailed. Results from numerical...

Applied optics, 2013, 52, pp.8134-8141. ⟨10.1364/AO.52.008134⟩. ⟨hal-00926663⟩

• Communication dans un congrès

High frequency characterization at the nanoscale

Kamel Haddadi, Gilles Dambrine, Henri Happy, Didier Theron, Tuami Lasri

4th China-French Symposium on Functional Materials and Devices, 2013, Shanghai, China. ⟨hal-00987965⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 2/3]

Raffaele Pisano

2013. ⟨hal-04511053⟩