Publicaciones

• Article dans une revue

Resonant TE Transmission Through a Continuous Metal Film: Perspectives for Low-Loss Plasmonic Elements

S. Tonchev, O. Parriaux, T. Tenev, I. Miloushev, David Troadec, G. Patriarche

Plasmonics, 2013, 8 (2), pp.829-833. ⟨10.1007/s11468-013-9479-0⟩. ⟨ujm-00864880⟩

• Communication dans un congrès

Mechanics and Machines. How science Worked and How Techniques Worked?

Raffaele Pisano

Workshop in History of Science, SCité Centre, University of Lille 1 & University of Alger (France-Algery), Jan 2013, Lille (FR), France. ⟨hal-04518657⟩

• Communication dans un congrès

Nano photoconductive switches for microwave applications

Charlotte Tripon-Canseliet, Salim Faci, Didier Decoster, Sonn Fatt Yoon, Jean Chazelas

SPIE Photonics West 2013, Feb 2013, San francisco, United States. ⟨hal-00751489⟩

• Communication dans un congrès

Selenium surface energy determination from size-dependent considerations

G. Guisbiers, S. Arscott, M. Gaudet, A. Belfiore, R. Snyders

2013 IEEE International Nanoelectronics Conference (INEC), Jan 2013, Singapore, Malaysia. pp.105-109, ⟨10.1109/INEC.2013.6465968⟩. ⟨hal-02345672⟩

• Article dans une revue

Low-temperature crystallization of high performance Pb0.4Sr 0.6TiO3 films compatible with the current silicon-based microelectronic technology

K. Li, Denis Remiens, X.L. Dong, J. Costecalde, N. Sama, T. Li, G. Du, Y. Chen, G.S. Wang

Applied Physics Letters, 2013, 102, 212901, 4 p. ⟨10.1063/1.4807792⟩. ⟨hal-00877663⟩

• Article dans une revue

Hidden surface states at non-polar GaN (101¯0) facets : intrinsic pinning of nanowires

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stiévenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

Applied Physics Letters, 2013, 103, 152101, 4 p. ⟨10.1063/1.4823723⟩. ⟨hal-00877636⟩

• Article dans une revue

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow, Hermann Sellier, Serge Huant, M. G. Pala, L. Desplanque, X. Wallart, Vincent Bayot, B. Hackens

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged...

Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩. ⟨hal-00932989⟩

• Article dans une revue

Six-port-based compact and low-cost near-field 35 GHz microscopy platform for non-destructive evaluation

Kamel Haddadi, T. Lasri

NDT & E International, 2013, 55, pp.102-108. ⟨10.1016/j.ndteint.2013.01.018⟩. ⟨hal-00797211⟩

• Article dans une revue

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

G. Moschetti, M. Abbasi, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

Solid-State Electronics, 2013, 79, pp.268-273. ⟨10.1016/j.sse.2012.06.013⟩. ⟨hal-00795944⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly...

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩