Publicaciones

Affichage de 7411 à 7420 sur 16064


  • Communication dans un congrès

Terahertz filters based on planar Goubau transmission lines with multi split rings resonators

Abdallah Chahadih, Serkan Kaya, Ibrahim Türer, Mokhtar Zehar, Gabriel Moreno, Y. Zapart, Abbas Ghaddar, Tahsin Akalin

The electromagnetic field around Planar Goubau transmission Line (PGL) offers the possibility of tailoring the response of metamaterials components such as single or multi-micro resonators type. In this paper, we suggest a novel design of filter based on PGL coupled with micro split rings...

38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, Sep 2013, Mainz, Germany. paper TU9-5, 2 p., ⟨10.1109/IRMMW-THz.2013.6665624⟩. ⟨hal-00914247⟩

  • Proceedings/Recueil des communications

On Lagrangian in Maxwell's electromagnetic theory

Raffaele Pisano

Scientiarum Historia VI, The Federate University of Rio de Janeiro Press, pp.44-59, 2013, ISSN 2176-123X. ⟨hal-04517937⟩

  • Article dans une revue

Optimal PWR codes for TH-PPM UWB multiple-access interference mitigation

K. Kouassi, Laurent Clavier, I. Doumbia, P. Rolland

IEEE Communications Letters, 2013, 17, pp.103-106. ⟨10.1109/LCOMM.2012.112812.122204⟩. ⟨hal-00795949⟩

  • Communication dans un congrès

Radio frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, D. Gloria, C. Raynaud

8th European Workshop on Silicon on Insulator Technology, Devices and Circuits, EuroSOI 2012, 2012, Montpellier, France. pp.73-78, ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00797713⟩

  • Article dans une revue

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

G. Moschetti, M. Abbasi, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

Solid-State Electronics, 2013, 79, pp.268-273. ⟨10.1016/j.sse.2012.06.013⟩. ⟨hal-00795944⟩

  • Article dans une revue

Metallic nanoparticles enhanced the spontaneous emission of semiconductor nanocrystals embedded in nanoimprinted photonic crystals

V. Reboud, Gaëtan Lévêque, M. Striccoli, T. Placido, A. Panniello, M.L. Curri, J. A. Alducin, T. Kehoe, N. Kehagias, D. Mecerreyes, S. Newcomb, D. Iacopino, G. Redmond, C.M. Sotomayor Torres

Nanoscale, 2013, 5, pp.239-245. ⟨10.1039/C2NR32134C⟩. ⟨hal-00796414⟩

  • Article dans une revue

Recent advances in the development of graphene-based surface plasmon resonance (SPR) interfaces

Sabine Szunerits, N. Maalouli, E. Wijaya, Jean-Pierre Vilcot, Rabah Boukherroub

Analytical and Bioanalytical Chemistry, 2013, 405, pp.1435-1443. ⟨10.1007/s00216-012-6624-0⟩. ⟨hal-00796418⟩

  • Article dans une revue

Six-port-based compact and low-cost near-field 35 GHz microscopy platform for non-destructive evaluation

Kamel Haddadi, T. Lasri

NDT & E International, 2013, 55, pp.102-108. ⟨10.1016/j.ndteint.2013.01.018⟩. ⟨hal-00797211⟩

  • Communication dans un congrès

Wafer-scale integration of piezoelectric actuation capabilities in nanoelectromechanical systems resonators

Denis Dezest, Fabrice Mathieu, Laurent Mazenq, Caroline Soyer, Jean Costecalde, Denis Remiens, Olivier Thomas, Jean-François Deü, Liviu Nicu

In this work, we demonstrate the integration of piezoelectric actuation means on arrays of nanocantilevers at the wafer scale. We use lead titanate zirconate (PZT) as piezoelectric material mainly because of its excellent actuation properties even when geometrically constrained at extreme scale

2013 Nanomechanical Sensing Workshop, May 2013, Stanford, USA, United States. pp.0. ⟨hal-03165172⟩

  • Communication dans un congrès

Impact of BEOL stress on BiCMOS9MW HBTs

Elodie Canderle, P. Chevalier, G. Avenier, N. Derrier, D. Céli, Christophe Gaquière

Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed...

27th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013, 2013, Bordeaux, France. session 13 : Advanced SiGe BiCMOS Processes, paper 13.1, 223-226, ⟨10.1109/BCTM.2013.6798181⟩. ⟨hal-00996056⟩