Publicaciones

Affichage de 7441 à 7450 sur 16092


  • Communication dans un congrès

Electric charge band gaps in phononic crystals

S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham Thi

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00934423⟩

  • Article dans une revue

Toward highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.335-340. ⟨10.1017/S1759078713000342⟩. ⟨hal-00871899⟩

  • Communication dans un congrès

Caractérisations microondes de condensateurs interdigités accordables sur films minces BTS élaborés par sol-gel

Nicolas Waldhoff, Didier Fasquelle, Karine Blary, Jean-Claude Carru

18èmes Journées Nationales Microondes (JNM 2013), May 2013, Paris, France. 4p. / J3-TM-P2. ⟨hal-00878393⟩

  • Communication dans un congrès

A high resolution nonvolatile analog memory ionic devices

L. Gao, F. Alibart, D.B. Strukov

4th Annual Non-Volatile Memories Workshop, NVMW 2013, 2013, San Diego, CA, United States. paper 57, 1-2. ⟨hal-00827380⟩

  • Article dans une revue

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, David Troadec, Jean-Paul Salvestrini, A. Ougazzaden

This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM...

Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00815384⟩

  • Communication dans un congrès

Impact of BEOL stress on BiCMOS9MW HBTs

Elodie Canderle, P. Chevalier, G. Avenier, N. Derrier, D. Céli, Christophe Gaquière

Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed...

27th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013, 2013, Bordeaux, France. session 13 : Advanced SiGe BiCMOS Processes, paper 13.1, 223-226, ⟨10.1109/BCTM.2013.6798181⟩. ⟨hal-00996056⟩

  • Communication dans un congrès

Technology of inkjet printing applied for flexible electronics

Wei Wei, Mohamed Moez Belhaj, Henri Happy

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, Jun 2013, Grenoble, France. 3 p. ⟨hal-00957772⟩

  • Communication dans un congrès

Scanning probe lithography as perspective tool for hypersonic surface phononic crystal fabrication

Anastasia Pavlova, Sergey Yankin

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. papier 194, 3 p. ⟨hal-00957778⟩