Publicaciones

• Chapitre d'ouvrage

Future trends in acoustic RF MEMS devices

Bertrand Dubus

Enz C.C., Kaiser A. MEMS-based circuits and systems for wireless communication, Springer, pp.Part 1, 95-117, 2013, ISBN 978-1-4419-8797-6 ; e-ISBN 978-1-4419-8798-3. ⟨10.1007/978-1-4419-8798-3_4⟩. ⟨hal-00800622⟩

• Communication dans un congrès

AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD

Philippe Altuntas, N. Defrance, Marie Lesecq, Adrien Cutivet, Alain Agboton, Yvon Cordier, Magdalena Chmielowska, Stephanie Rennesson, Julien Camus, Keltouma Aït Aïssa, Laurent Le Brizoual, Mohamed Abdou Djouadi, Jean-Claude de Jaeger

AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic...

22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. paper 5.6, 2 p. ⟨hal-00877773⟩

• Communication dans un congrès

Microwave reflectometry : a high-resolution technique for measuring vibration of capacitive microresonators

Bernard Legrand, D. Ducatteau, D. Theron, B. Walter, H. Tanbakuchi

17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2013, 2013, Barcelona, Spain. paper M3P.140, 566-569, Outstanding poster presentation award nomination, ⟨10.1109/Transducers.2013.6626829⟩. ⟨hal-00877759⟩

• Article dans une revue

Modeling of MEMS resonator piezoelectric disc by means of an equicharge current source method

L. Elmaimouni, F.E. Ratolojanahary, Jean-Etienne Lefebvre, J.G. Yu, A. Raherison, Tadeusz Gryba

Ultrasonics, 2013, 53, pp.1270-1279. ⟨10.1016/j.ultras.2013.03.011⟩. ⟨hal-00877662⟩

• Communication dans un congrès

Etude de la lecture de tags RFID situés à l'intérieur d'un véhicule à partir d'un interrogateur extérieur

Philippe Mariage, M.M. Handeme Nguema, Laurent Clavier

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J3-AP1-4, 4 p. ⟨hal-00878395⟩

• Chapitre d'ouvrage

Schottky source/drain MOSFETs

Emmanuel Dubois, Florent Ravaux, Zhenkun Chen, Nicolas Reckinger, Xiaohui Tang, Jean-Pierre Raskin, Maud Vinet, Louis Hutin

Deleonibus S. Intelligent integrated systems : technologies, devices and architectures, Pan Stanford Publishing, section 1, chapter 2, 55-96, 2013, 978-9-8144-1142-4. ⟨hal-00878461⟩

• Article dans une revue

The effects of increasing antenna arrays and spatial correlation on loading algorithm for closed-loop MIMO vehicle-to-infrastructure communications

Imade Fatani, Mohamed Gharbi, François-Xavier Coudoux, Marion Berbineau, Patrick Corlay, Marc G. Gazalet

In this paper, an efficient bit-loading algorithm in the context of SVD-aided MIMO transmission for vehicle-to-infrastructure (V2I) communications is presented. This algorithm, which exploits the intrinsic properties of the eigen-channels resulting from SVD, tries to minimize the error probability...

Lecture Notes in Computer Science, 2013, 7865, pp.107-120. ⟨10.1007/978-3-642-37974-1_9⟩. ⟨hal-00877704⟩

• Communication dans un congrès

Energy efficient adaptive video compression scheme for WVSNs

O. Alaoui Fdili, François-Xavier Coudoux, Y. Fakhri, Patrick Corlay, D. Aboutajdine

21st European Signal Processing Conference, EUSIPCO 2013, 2013, Marrakech, Morocco. USB Proceedings, session WE-L9, 6 p. ⟨hal-00877788⟩

• Communication dans un congrès

Surfaces absorbantes à base de ferroélectriques

J.P. Hao, Véronique Sadaune, L. Burgnies, Eric Lheurette, D. Lippens

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-TM2-2, 4 p. ⟨hal-00878388⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly...

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩