Publicaciones

• Article dans une revue

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref

Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩

• Communication dans un congrès

22 Gbps wireless communication system at 0.4 THz

Guillaume Ducournau, P. Szriftgiser, Fabio Pavanello, Philipp Latzel, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, Mohammed Zaknoune, Denis Bacquet, Jean-Francois Lampin

By combining a lJTC-PD as a THz emitter and a 400 G Hz Schottky-based heterodyne detection, we realized an indoor THz link working up to 22 Gbps at 400 GHz carrier frequency with ultra-low THz power. The eye diagram at receiver is clearly opened are the system is working with only 1 mu W received...

38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2013, Mainz, Germany. ⟨10.1109/IRMMW-THz.2013.6665491⟩. ⟨hal-03286171⟩

• Article dans une revue

Validation of experimental whole-body SAR assessment method in a complex indoor environment

Aliou Bamba, Wout Joseph, Guenter Vermeeren, Emmeric Tanghe, Davy Gaillot, Jørgen B. Andersen, Jesper Ødum Nielsen, M. Lienard, Luc Martens

Experimentally assessing the whole-body specific absorption rate (SARwb) in a complex indoor environment is very challenging. An experimental method based on room electromagnetics theory (accounting only the line-of-sight as specular path) is validated using numerical simulations with the finite-...

Bioelectromagnetics, 2013, 34, pp.122-132. ⟨10.1002/bem.21749⟩. ⟨hal-00796439⟩

• Article dans une revue

Toward highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.335-340. ⟨10.1017/S1759078713000342⟩. ⟨hal-00871899⟩

• Communication dans un congrès

Deterministic placement of doping atoms on hydroxylated surfaces

L. Mathey, L. Veyre, H. Fontaine, V. Enyedi, K. Yckache, J. Guerrero, N. Chevalier, F. Martin, J.P. Barnes, F. Bertin, C. Durand, Maxime Berthe, B. Grandidier, C. Thieuleux, C. Coperet

An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated...

International Conference on Solid State Devices and Materials, SSDM 2013, 2013, Fukuoka, Japan. ⟨10.7567/SSDM.2013.B-3-2⟩. ⟨hal-00956279⟩

• Article dans une revue

Peroxynitrite activity of hemin-functionalized reduced graphene oxide

R. Oprea, S. Peteu, P. Subramanian, Qiang Wang, E. Pichonat, H. Happy, M. Bayachou, Rabah Boukherroub, Sabine Szunerits

Analyst, 2013, 138, pp.4345-4352. ⟨10.1039/C3AN00678F⟩. ⟨hal-00871895⟩

• Article dans une revue

Rate equations analysis of a dual-wavelength quantum cascade laser

A. Hamadou, Jean-Luc Thobel, S. Lamari

Optics Communications, 2013, 305, pp.147-154. ⟨10.1016/j.optcom.2013.05.004⟩. ⟨hal-00872061⟩

• Article dans une revue

Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers

Abdelkader Aissat, Said Nacer, Farid Ykhlef, Jean-Pierre Vilcot

The aim of this work is to model the properties of GaInAsNSb/GaAs compressively strained structures. Indeed, Ga1−xInxAs1−y−zNySbz has been found to be a potentially superior material to GaInAsN for long wavelength laser dedicated to optical fiber communications. Furthermore, this material can be...

Materials Science in Semiconductor Processing, 2013, 16, pp.1936-1942. ⟨10.1016/j.mssp.2013.07.021⟩. ⟨hal-00871946⟩

• Article dans une revue

MEMS piezoresistive ring resonator for AFM imaging with pico-Newton force resolution

Z. Xiong, B. Walter, E. Mairiaux, M. Faucher, L. Buchaillot, Bernard Legrand

Journal of Micromechanics and Microengineering, 2013, 23, pp.035016-1-10. ⟨10.1088/0960-1317/23/3/035016⟩. ⟨hal-00795965⟩

• Communication dans un congrès

Self-aligned contacts for 10nm FDSOI node : from device to circuit evaluation

H. Niebojewski, C. Le Royer, Y. Morand, O. Rozeau, M.A. Jaud, S. Barnola, C. Arvet, J. Pradelles, J. Bustos, J.M. Pedini, Emmanuel Dubois, O. Faynot

We propose an original architecture adapted to the 10nm transistor node (pitch 64nm) for FDSOI technology. This structure features self-aligned contacts and a gate capping dielectric layer preventing any short in case of lithographic misalignment of contacts. 2D simulations are carried out to...

39th IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, IEEE S3S 2013, 2013, Monterey, CA, United States. paper 6a.4, 2 p., ⟨10.1109/S3S.2013.6716549⟩. ⟨hal-00955675⟩