Publicaciones

• Communication dans un congrès

Nanoscale capacitors study with an interferometric scanning microwave microscope

Fei Wang, Nicolas Clément, David Troadec, Bernard Legrand, Gilles Dambrine, Didier Theron

Electrical impedance characterization at the nanoscale is a challenge for beyond CMOS investigations and for understanding the electronic properties of nanomaterials. Among the various scanning probe microscopes, Scanning Microwave Microscope (SMM) is of particular interest because it combines...

Materials Research Society Fall Meeting, MRS Fall 2013, Symposium LL : Advances in Scanning Probe Microscopy, 2013, Boston, MA, United States. ⟨hal-00944017⟩

• Communication dans un congrès

E-beam fabricated GaN Schottky diodes : high-frequency and non-linear properties

C. Jin, M. Zaknoune, D. Ducatteau, D. Pavlidis

E-Beam processed GaN-based Schottky diodes for microwave, millimeter-wave power applications were characterized under both small-signal and large-signal conditions. A Large-Signal Network Analyzer was used and equivalent circuit models were obtained by combining small signal S-parameter data with...

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper TH3H-5, 4 p., ⟨10.1109/MWSYM.2013.6697734⟩. ⟨hal-00944029⟩

• Article dans une revue

Frequency and angular bandwidth of acousto-optic deflectors with ultrasonic walk-off

Jean-Claude Kastelik, Samuel Dupont, Konstantin B. Yushkov, Joseph Gazalet

Ultrasonics, 2013, 53, pp.219-224. ⟨10.1016/j.ultras.2012.06.003⟩. ⟨hal-00796423⟩

• Article dans une revue

Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Physica B: Condensed Matter, 2013, 412, pp.126-129. ⟨10.1016/j.physb.2012.11.031⟩. ⟨hal-00796437⟩

• Article dans une revue

GaAs Fabry-Perot cavity photoconductors : switching with picojoule optical pulses

Emilien Peytavit, S. Formont, Jean-Francois Lampin

Electronics Letters, 2013, 49, pp.207-208. ⟨10.1049/el.2012.3993⟩. ⟨hal-00796471⟩

• Article dans une revue

Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene

F. Godel, E. Pichonat, D. Vignaud, H. Majjad, D. Metten, Y. Henry, S. Berciaud, J.F. Dayen, D. Halley

Nanotechnology, 2013, 24, 475708, 6 p. ⟨10.1088/0957-4484/24/47/475708⟩. ⟨hal-00881293⟩

• Article dans une revue

Design guidelines for releasing silicon nanowire arrays by liquid and vapor phase hydrofluoric acid

Vikram Passi, Emmanuel Dubois, Aurélie Lecestre, A. Sanchez-Linde, B. Du Bois, J.P. Raskin

Silicon nanowires of various geometries are fabricated using top-down approach starting from silicon-on-insulator substrate. Arrays of nanowires presenting widths from 25 up to 100 nm regularly spaced by 50 nm up to 1 μm are patterned and released. A comparison of various release methodologies,...

Microelectronic Engineering, 2013, 103, pp.57-65. ⟨10.1016/j.mee.2012.09.002⟩. ⟨hal-00795975⟩

• Proceedings/Recueil des communications

Notes on the historical conceptual streams for mathematics and physics teaching

Raffaele Pisano

Proceedings of the Lithuanian Mathematical Society, Ser. A, Serie A (54), Vilnius university, pp.vii-xvii, 2013, 0132-2818. ⟨hal-04513852⟩

• Communication dans un congrès

Terahertz electromagnetic response of random-bond metal mesh

Yuichiro Okui, Keisuke Takano, Hideaki Kitahara, Abdallah Chahadih, Abbas Ghaddar, Tahsin Akalin, Masanori Hangyou

A metal mesh shows Drude-like metallic effective permittivity dispersion. By cutting all wires of the mesh, the metal mesh becomes a metal cross array and shows Lorentz-like effective permittivity dispersion. We prepared the samples of metal mesh with random cut systematically and measured the...

38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, Sep 2013, Mainz, Germany. paper TH2-5, 2 p., ⟨10.1109/IRMMW-THz.2013.6665879⟩. ⟨hal-00914244⟩

• Article dans une revue

Revisited RF compact model of gate resistance suitable for high-K/metal gate technology

B. Dormieu, P. Scheer, C. Charbuillet, H. Jaouen, Francois Danneville

IEEE Transactions on Electron Devices, 2013, 60, pp.13-19. ⟨10.1109/TED.2012.2225146⟩. ⟨hal-00795950⟩