Publicaciones

• Communication dans un congrès

A high resolution nonvolatile analog memory ionic devices

L. Gao, F. Alibart, D.B. Strukov

4th Annual Non-Volatile Memories Workshop, NVMW 2013, 2013, San Diego, CA, United States. paper 57, 1-2. ⟨hal-00827380⟩

• Article dans une revue

Peroxynitrite activity of hemin-functionalized reduced graphene oxide

R. Oprea, S. Peteu, P. Subramanian, Qiang Wang, E. Pichonat, H. Happy, M. Bayachou, Rabah Boukherroub, Sabine Szunerits

Analyst, 2013, 138, pp.4345-4352. ⟨10.1039/C3AN00678F⟩. ⟨hal-00871895⟩

• Article dans une revue

Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers

Abdelkader Aissat, Said Nacer, Farid Ykhlef, Jean-Pierre Vilcot

The aim of this work is to model the properties of GaInAsNSb/GaAs compressively strained structures. Indeed, Ga1−xInxAs1−y−zNySbz has been found to be a potentially superior material to GaInAsN for long wavelength laser dedicated to optical fiber communications. Furthermore, this material can be...

Materials Science in Semiconductor Processing, 2013, 16, pp.1936-1942. ⟨10.1016/j.mssp.2013.07.021⟩. ⟨hal-00871946⟩

• Article dans une revue

Toward highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.335-340. ⟨10.1017/S1759078713000342⟩. ⟨hal-00871899⟩

• Communication dans un congrès

News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩

• Article dans une revue

Rate equations analysis of a dual-wavelength quantum cascade laser

A. Hamadou, Jean-Luc Thobel, S. Lamari

Optics Communications, 2013, 305, pp.147-154. ⟨10.1016/j.optcom.2013.05.004⟩. ⟨hal-00872061⟩

• Article dans une revue

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, David Troadec, Jean-Paul Salvestrini, A. Ougazzaden

This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM...

Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00815384⟩

• Communication dans un congrès

Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩

• Autre publication scientifique

Design, fabrication and characterization of MEMS-based oscillating AFM probes

Zhuang Xiong

2013. ⟨hal-00799260⟩

• Communication dans un congrès

Phase Coded Costas Signals for Ambiguity Function Improvement and Grating lobes Suppression

Nadjah Touati, Charles Tatkeu, Thierry Chonavel, Atika Rivenq

In this paper, a novel radar signal is proposed. It is based on a modification of Costas signals obtained by increasing the frequency separation of Costas frequency hops beyond the orthogonality condition. Indeed, Costas codes are well known for their good Range-Doppler properties. Their...

VTC 2013 Fall : IEEE Vehicular Technology Conference (VTC Fall), Sep 2013, Las Vegas, France. 5p. ⟨hal-00918275⟩