Publicaciones

• Autre publication scientifique

Génération d'ondes acoustiques de surface par différentes sources lasers - Applications à la caractérisation sans contact de défauts

Frédéric Faëse

2013. ⟨hal-00915574⟩

• Article dans une revue

BCB cap packaging of MEMS switches integrated with 100-m MMIC wafer

S. Seok, J. Kim, M. Fryziel, N. Rolland, B. Grandchamp, W. Simon, R. Baggen

IEEE Transactions on Components, Packaging and Manufacturing Technology, 2013, 3, pp.1799-1803. ⟨10.1109/TCPMT.2013.2278713⟩. ⟨hal-00903757⟩

• Communication dans un congrès

Electric charge band gaps in phononic crystals

S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham Thi

2nd International Conference on Phononic Crystals/Metamaterials, Phonon Transport and Optomechanics, PHONONICS 2013, 2013, Sharm El-Sheikh, Egypt. Paper PHONONICS-2013-0148, 120-121. ⟨hal-00881292⟩

• Communication dans un congrès

Présentation de l'école sur les métamatériaux et l'ouvrage qui en est issu

Eric Lheurette

Assemblée Générale du GdR Ondes 2451 " Interférences d'ondes ", 2013, Dijon, France. ⟨hal-00879915⟩

• Article dans une revue

Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz

A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, Michel Rousseau, M. Chmielowska, M. Ramdani, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩. ⟨hal-00809856⟩

• Autre publication scientifique

Design, fabrication and characterization of MEMS-based oscillating AFM probes

Zhuang Xiong

2013. ⟨hal-00799260⟩

• Article dans une revue

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, David Troadec, Jean-Paul Salvestrini, A. Ougazzaden

This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM...

Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00815384⟩

• Chapitre d'ouvrage

Electrochemical detection

T. Houssin, V. Senez

Bridle H. Waterborne pathogens - Detection methods and applications, Academic Press/Elsevier, chapter 6, 151-192, 2013, 978-0-444-59543-0. ⟨hal-00878470⟩

• Article dans une revue

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref

Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩

• Article dans une revue

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

C. Rolland, P. Caroff, Christophe Coinon, X. Wallart, R. Leturcq

Applied Physics Letters, 2013, 102, pp.223105-1-4. ⟨10.1063/1.4809576⟩. ⟨hal-00871968⟩