Publicaciones

• Article dans une revue

Doped semiconductor nanocrystal junctions

Lukasz Borowik, Thuat Nguyen-Tran, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that...

Journal of Applied Physics, 2013, 114, 204305, 5 p. ⟨10.1063/1.4834516⟩. ⟨hal-00941624⟩

• Communication dans un congrès

Wafer-scale integration of piezoelectric actuation capabilities in nanoelectromechanical systems resonators

Denis Dezest, Fabrice Mathieu, Laurent Mazenq, Caroline Soyer, Jean Costecalde, Denis Remiens, Olivier Thomas, Jean-François Deü, Liviu Nicu

In this work, we demonstrate the integration of piezoelectric actuation means on arrays of nanocantilevers at the wafer scale. We use lead titanate zirconate (PZT) as piezoelectric material mainly because of its excellent actuation properties even when geometrically constrained at extreme scale

2013 Nanomechanical Sensing Workshop, May 2013, Stanford, USA, United States. pp.0. ⟨hal-03165172⟩

• Article dans une revue

Surface states and conductivity of silicon nano-wires

U.K. Bhaskar, T. Pardoen, V. Passi, J.P. Raskin

The transport characteristics of low dimensional semiconductors like silicon nano-wires (SiNWs) rarely conform to expectations from geometry and dopant density, exhibiting significant variations as a function of different surface terminations/conditions. The association of these mechanisms with...

Journal of Applied Physics, 2013, 113 (13), pp.134502. ⟨10.1063/1.4798611⟩. ⟨hal-00809853⟩

• Article dans une revue

Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Christophe Krzeminski

Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the...

Journal of Applied Physics, 2013, 114, 224501, 9 p. ⟨10.1063/1.4839675⟩. ⟨hal-00917560⟩

• Article dans une revue

Modeling of MEMS resonator piezoelectric disc by means of an equicharge current source method

L. Elmaimouni, F.E. Ratolojanahary, Jean-Etienne Lefebvre, J.G. Yu, A. Raherison, Tadeusz Gryba

Ultrasonics, 2013, 53, pp.1270-1279. ⟨10.1016/j.ultras.2013.03.011⟩. ⟨hal-00877662⟩

• Article dans une revue

Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Physica B: Condensed Matter, 2013, 412, pp.126-129. ⟨10.1016/j.physb.2012.11.031⟩. ⟨hal-00796437⟩

• Article dans une revue

GaAs Fabry-Perot cavity photoconductors : switching with picojoule optical pulses

Emilien Peytavit, S. Formont, Jean-Francois Lampin

Electronics Letters, 2013, 49, pp.207-208. ⟨10.1049/el.2012.3993⟩. ⟨hal-00796471⟩

• Article dans une revue

Modeling of high contrast partially electroded resonators by means of a polynomial approach

P.M. Rabotovao, F.E. Ratolojanahary, Jean-Etienne Lefebvre, A. Raherison, L. Elmaimouni, Tadeusz Gryba, J.G. Yu

Journal of Applied Physics, 2013, 114 (12), pp.124502. ⟨10.1063/1.4821768⟩. ⟨hal-00877665⟩

• Article dans une revue

In situ high-temperature characterization of AlN-based surface acoustic wave devices

T. Aubert, Jochen Bardong, Ouarda Legrani, O. Elmazria, M. Badreddine Assouar, Gudrun Bruckner, Abdelkrim Talbi

We report on in situ electrical measurements of surface acoustic wave delay lines based on AlN/sapphire structure and iridium interdigital transducers between 20 °C and 1050 °C under vacuum conditions. The devices show a great potential for temperature sensing applications. Burnout is only observed...

Journal of Applied Physics, 2013, 114 (1), pp.014505. ⟨10.1063/1.4812565⟩. ⟨hal-00871910⟩

• Article dans une revue

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

F. Fromm, M.H. Oliveira, A. Molina-Sanchez, M. Hundhausen, J.M.J. Lopes, H. Riechert, L. Wirtz, T. Seyller

We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of...

New Journal of Physics, 2013, 15, pp.043031-1-11. ⟨10.1088/1367-2630/15/4/043031⟩. ⟨hal-00823434⟩