Publicaciones

• Communication dans un congrès

Giant piezoresistance in silicon nanowires

A.C.H. Rowe, J.S. Milne, S. Arscott

Materials Research Society Spring Meeting, MRS Spring 2013, Symposium Q : Surfaces of Nanoscale Semiconductors, 2013, San Francisco, CA, United States. ⟨hal-00811788⟩

• Article dans une revue

Irradiation damage tests on backside-illuminated CMOS APS prototypes for the extreme ultraviolet imager on-board solar orbiter

A. Benmoussa, S. Gissot, B. Giordanengo, G. Meynants, X. Wang, B. Wolfs, J. Bogaerts, U. Schuhle, G. Berger, A. Gottwald, C. Laubis, U. Kroth, F. Scholze, A. Soltani, T. Saito

IEEE Transactions on Nuclear Science, 2013, 60, pp.3907-3914. ⟨10.1109/TNS.2013.2279550⟩. ⟨hal-00877648⟩

• Article dans une revue

Microwave insulation optimization of photoswitches consisting of a coplanar line introducing a single-electrode MSM photodetector

M. El Besseghi, Abdelkader Aissat, Didier Decoster

International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering, 2013, 2, pp.4635-4641. ⟨hal-00877638⟩

• Communication dans un congrès

News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩

• Communication dans un congrès

Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩

• Article dans une revue

Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers

Abdelkader Aissat, Said Nacer, Farid Ykhlef, Jean-Pierre Vilcot

The aim of this work is to model the properties of GaInAsNSb/GaAs compressively strained structures. Indeed, Ga1−xInxAs1−y−zNySbz has been found to be a potentially superior material to GaInAsN for long wavelength laser dedicated to optical fiber communications. Furthermore, this material can be...

Materials Science in Semiconductor Processing, 2013, 16, pp.1936-1942. ⟨10.1016/j.mssp.2013.07.021⟩. ⟨hal-00871946⟩

• Article dans une revue

Rate equations analysis of a dual-wavelength quantum cascade laser

A. Hamadou, Jean-Luc Thobel, S. Lamari

Optics Communications, 2013, 305, pp.147-154. ⟨10.1016/j.optcom.2013.05.004⟩. ⟨hal-00872061⟩

• Article dans une revue

Toward highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.335-340. ⟨10.1017/S1759078713000342⟩. ⟨hal-00871899⟩

• Article dans une revue

Peroxynitrite activity of hemin-functionalized reduced graphene oxide

R. Oprea, S. Peteu, P. Subramanian, Qiang Wang, E. Pichonat, H. Happy, M. Bayachou, Rabah Boukherroub, Sabine Szunerits

Analyst, 2013, 138, pp.4345-4352. ⟨10.1039/C3AN00678F⟩. ⟨hal-00871895⟩

• Communication dans un congrès

Multiplication de fréquence par guide coplanaire ferroélectrique

Freddy Ponchel, L. Burgnies, D. Ducatteau, Eric Lheurette, Denis Remiens, D. Lippens

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J1-DA3-2, 4 p. ⟨hal-00878386⟩