Publicaciones

• Article dans une revue

BCB cap packaging of MEMS switches integrated with 100-m MMIC wafer

S. Seok, J. Kim, M. Fryziel, N. Rolland, B. Grandchamp, W. Simon, R. Baggen

IEEE Transactions on Components, Packaging and Manufacturing Technology, 2013, 3, pp.1799-1803. ⟨10.1109/TCPMT.2013.2278713⟩. ⟨hal-00903757⟩

• Communication dans un congrès

Electric charge band gaps in phononic crystals

S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham Thi

2nd International Conference on Phononic Crystals/Metamaterials, Phonon Transport and Optomechanics, PHONONICS 2013, 2013, Sharm El-Sheikh, Egypt. Paper PHONONICS-2013-0148, 120-121. ⟨hal-00881292⟩

• Communication dans un congrès

Présentation de l'école sur les métamatériaux et l'ouvrage qui en est issu

Eric Lheurette

Assemblée Générale du GdR Ondes 2451 " Interférences d'ondes ", 2013, Dijon, France. ⟨hal-00879915⟩

• Article dans une revue

Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz

A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, Michel Rousseau, M. Chmielowska, M. Ramdani, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩. ⟨hal-00809856⟩

• Autre publication scientifique

Design, fabrication and characterization of MEMS-based oscillating AFM probes

Zhuang Xiong

2013. ⟨hal-00799260⟩

• Chapitre d'ouvrage

Electrochemical detection

T. Houssin, V. Senez

Bridle H. Waterborne pathogens - Detection methods and applications, Academic Press/Elsevier, chapter 6, 151-192, 2013, 978-0-444-59543-0. ⟨hal-00878470⟩

• Article dans une revue

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref

Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩

• Article dans une revue

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

N. Clement, X.L. Han, Guilhem Larrieu

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the...

Applied Physics Letters, 2013, 103 (26), pp.263504. ⟨10.1063/1.4858955⟩. ⟨hal-00922923⟩

• Ouvrages

Physics, Astronomy and Engineering. Critical Problems in the History of Science and Society. Proceedings of 32nd Congress for The SISFA–Italian Society of Historians of Physics and Astronomy

Raffaele Pisano, Danilo Capecchi, Anna Lukešová

The Scientia Socialis UAB & Scientific Methodical Centre Scientia Educologica Press, 2013, 978-609-95513-0-2. ⟨hal-04517712⟩

• Proceedings/Recueil des communications

Notes on the Concept of Force in Kepler

Raffaele Pisano, Paolo Bussotti

Physics, Astronomy and Engineering. Critical Problems in the History of Science and Society. Proceedings of the International 32nd Congress for The SISFA–Italian Society of Historians of Physics and Astronomy, The Scientia Socialis UAB & Scientific Methodical Centre Scientia Educologica Press, pp.337-344, 2013, 978-609-95513-0-2. ⟨hal-04513863⟩