Publicaciones

Affichage de 7611 à 7620 sur 16302


  • Article dans une revue

Toward highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.335-340. ⟨10.1017/S1759078713000342⟩. ⟨hal-00871899⟩

  • Communication dans un congrès

Deterministic placement of doping atoms on hydroxylated surfaces

L. Mathey, L. Veyre, H. Fontaine, V. Enyedi, K. Yckache, J. Guerrero, N. Chevalier, F. Martin, J.P. Barnes, F. Bertin, C. Durand, Maxime Berthe, B. Grandidier, C. Thieuleux, C. Coperet

An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated...

International Conference on Solid State Devices and Materials, SSDM 2013, 2013, Fukuoka, Japan. ⟨10.7567/SSDM.2013.B-3-2⟩. ⟨hal-00956279⟩

  • Article dans une revue

Peroxynitrite activity of hemin-functionalized reduced graphene oxide

R. Oprea, S. Peteu, P. Subramanian, Qiang Wang, E. Pichonat, H. Happy, M. Bayachou, Rabah Boukherroub, Sabine Szunerits

Analyst, 2013, 138, pp.4345-4352. ⟨10.1039/C3AN00678F⟩. ⟨hal-00871895⟩

  • Article dans une revue

Rate equations analysis of a dual-wavelength quantum cascade laser

A. Hamadou, Jean-Luc Thobel, S. Lamari

Optics Communications, 2013, 305, pp.147-154. ⟨10.1016/j.optcom.2013.05.004⟩. ⟨hal-00872061⟩

  • Article dans une revue

MEMS piezoresistive ring resonator for AFM imaging with pico-Newton force resolution

Z. Xiong, B. Walter, E. Mairiaux, M. Faucher, L. Buchaillot, Bernard Legrand

Journal of Micromechanics and Microengineering, 2013, 23, pp.035016-1-10. ⟨10.1088/0960-1317/23/3/035016⟩. ⟨hal-00795965⟩

  • Communication dans un congrès

Self-aligned contacts for 10nm FDSOI node : from device to circuit evaluation

H. Niebojewski, C. Le Royer, Y. Morand, O. Rozeau, M.A. Jaud, S. Barnola, C. Arvet, J. Pradelles, J. Bustos, J.M. Pedini, Emmanuel Dubois, O. Faynot

We propose an original architecture adapted to the 10nm transistor node (pitch 64nm) for FDSOI technology. This structure features self-aligned contacts and a gate capping dielectric layer preventing any short in case of lithographic misalignment of contacts. 2D simulations are carried out to...

39th IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, IEEE S3S 2013, 2013, Monterey, CA, United States. paper 6a.4, 2 p., ⟨10.1109/S3S.2013.6716549⟩. ⟨hal-00955675⟩

  • Article dans une revue

Preface for the special issue of MTAP following CBMI 2011

José M. Martínez, Bernard Merialdo, Jenny Benois-Pineau, Joemon Jose

Multimedia Tools and Applications, 2013, 62 (1), pp.1 - 4. ⟨10.1007/s11042-011-0927-6⟩. ⟨hal-01437497⟩

  • Article dans une revue

Delay time calculation for dual-wavelength quantum cascade lasers

A. Hamadou, S. Lamari, Jean-Luc Thobel

Journal of Applied Physics, 2013, 114, 203102, 7 p. ⟨10.1063/1.4829914⟩. ⟨hal-00912357⟩