Publicaciones

Affichage de 7651 à 7660 sur 16064


  • Communication dans un congrès

94-GHz load pull measurements of SiGe HBT by extracting output power density in W-band

Issam Hasnaoui, Elodie Canderle, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on lastgeneration SiGe HBTs by extracting the input reflection hot Sparameter (...

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-4, 400-403. ⟨hal-00922493⟩

  • Article dans une revue

Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices

F Medjdoub, B. Grimbert, D. Ducatteau, N. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.044001-1-3. ⟨10.7567/APEX.6.044001⟩. ⟨hal-00809852⟩

  • Article dans une revue

Manifestation of charged and strained graphene layers in the Raman response of graphite intercalation compounds

J.C. Chacon-Torres, L. Wirtz, T. Pichler

ACS Nano, 2013, 7, pp.9249-9259. ⟨10.1021/nn403885k⟩. ⟨hal-00878430⟩

  • Article dans une revue

Intrinsic bandgap of cleaved ZnO(110) surfaces

A. Sabitova, P. Ebert, A. Lenz, S. Schaafhausen, L. Ivanova, M. Dähne, A. Hoffmann, R.E. Dunin-Borkowski, A. Förster, B. Grandidier, H. Eisele

Applied Physics Letters, 2013, 102, pp.021608-1-4. ⟨10.1063/1.4776674⟩. ⟨hal-00796416⟩

  • Article dans une revue

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Paul Sangare, Guillaume Ducournau, Bertrand Grimbert, Virginie Brandli, Marc Faucher, Christophe Gaquière, Ana Iniguez-De-La-Torre, Ignacio Íñiguez-De-La-Torre, Jean-Francois Millithaler, Javier Mateos, Tomás González

The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both...

Journal of Applied Physics, 2013, 113 (3), pp.034305. ⟨10.1063/1.4775406⟩. ⟨hal-00796434⟩

  • Article dans une revue

Piezoresistance of nano-scale silicon up to 2 GPa in tension

U.K. Bhaskar, T. Pardoen, V. Passi, J.P. Raskin

Applied Physics Letters, 2013, 102, pp.031911-1-4. ⟨10.1063/1.4788919⟩. ⟨hal-00795970⟩

  • Communication dans un congrès

Determination of the whole-body absorption cross section of a phantom using RiMAX

Aliou Bamba, Wout Joseph, Emmeric Tanghe, Luc Martens, Davy Gaillot, M. Lienard

The reverberation time has been measured in a reverberation chamber for different loads and for a cross polarized transceiver at the frequency of 1.8 GHz. We determine the whole-body absorption cross section of a canonical phantom using a maximum-likehood high-resolution channel parameters...

IEEE Antennas and Propagation Society International Symposium, AP-S/URSI 2013, Jul 2013, Orlando, FL, United States. paper 306.7, 716-717, ⟨10.1109/APS.2013.6711018⟩. ⟨hal-00957771⟩