Publicaciones

• Communication dans un congrès

Surfaces absorbantes à base de ferroélectriques

J.P. Hao, Véronique Sadaune, L. Burgnies, Eric Lheurette, D. Lippens

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-TM2-2, 4 p. ⟨hal-00878388⟩

• Communication dans un congrès

Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction

I. Razado-Colambo, J. Avila, D. Vignaud, S. Godey, X. Wallart, M.C. Asensio

19th International Vacuum Congress, IVC-19, 2013, Paris, France. ⟨hal-00878507⟩

• Communication dans un congrès

Microwave reflectometry : a high-resolution technique for measuring vibration of capacitive microresonators

Bernard Legrand, D. Ducatteau, D. Theron, B. Walter, H. Tanbakuchi

17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2013, 2013, Barcelona, Spain. paper M3P.140, 566-569, Outstanding poster presentation award nomination, ⟨10.1109/Transducers.2013.6626829⟩. ⟨hal-00877759⟩

• Article dans une revue

Six-port-based compact and low-cost near-field 35 GHz microscopy platform for non-destructive evaluation

Kamel Haddadi, T. Lasri

NDT & E International, 2013, 55, pp.102-108. ⟨10.1016/j.ndteint.2013.01.018⟩. ⟨hal-00797211⟩

• Article dans une revue

Surface states and conductivity of silicon nano-wires

U.K. Bhaskar, T. Pardoen, V. Passi, J.P. Raskin

The transport characteristics of low dimensional semiconductors like silicon nano-wires (SiNWs) rarely conform to expectations from geometry and dopant density, exhibiting significant variations as a function of different surface terminations/conditions. The association of these mechanisms with...

Journal of Applied Physics, 2013, 113 (13), pp.134502. ⟨10.1063/1.4798611⟩. ⟨hal-00809853⟩

• Article dans une revue

Doped semiconductor nanocrystal junctions

Lukasz Borowik, Thuat Nguyen-Tran, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that...

Journal of Applied Physics, 2013, 114, 204305, 5 p. ⟨10.1063/1.4834516⟩. ⟨hal-00941624⟩

• Article dans une revue

Electronic structure and transport properties of Si nanotubes

J. Li, T. Gu, C. Delerue, Y.M. Niquet

The electronic structure and the transport properties of Si nanotubes with outer diameter between 2 and 20 nm are investigated using fully atomistic simulations. A formula is given for the energy of the band edges versus diameter and thickness. The phonon-limited mobility of electrons and holes is...

Journal of Applied Physics, 2013, 114 (5), pp.053706. ⟨10.1063/1.4817527⟩. ⟨hal-00871969⟩

• Article dans une revue

Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Christophe Krzeminski

Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the...

Journal of Applied Physics, 2013, 114, 224501, 9 p. ⟨10.1063/1.4839675⟩. ⟨hal-00917560⟩

• Communication dans un congrès

Radio frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, D. Gloria, C. Raynaud

8th European Workshop on Silicon on Insulator Technology, Devices and Circuits, EuroSOI 2012, 2012, Montpellier, France. pp.73-78, ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00797713⟩

• Communication dans un congrès

Interactions optomécaniques dans les cavités phoxoniques

Said El-Jallal, Mourad Oudich, Yan Pennec, Bahram Djafari-Rouhani, Abdelkader Makhoute

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957779⟩