Publicaciones

Affichage de 7721 à 7730 sur 16092


  • Communication dans un congrès

High cut-off frequency performances of 100nm-gate InAlAs/InGaAs high electron mobility transistors on polyimide flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.15-16. ⟨hal-00828414⟩

  • Communication dans un congrès

The PROTERRA project : advanced processes using alternative raw materials for an economic production of high efficiency solar cells and modules

N. Le Quang, M. Gauthier, M. Gerard, S. Williatte, A.M. Rambaud, G. Goaer, M. Lemiti, D. Blanc-Pélissier, A. Focsa, E. Fourmond, D. Conte, J. Moyroud, Jean-Pierre Vilcot, M. Pawlik, Mathieu Halbwax, N. Auriac, R. Monna, S. Gall

28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013, 2013, Paris, France. paper 2DV.3.42, 1952-1956, ⟨10.4229/28thEUPVSEC2013-2DV.3.42⟩. ⟨hal-00908679⟩

  • Communication dans un congrès

All E-beam technology of GaN Schottky diodes and their large-signal characteristics

C. Jin, M. Zaknoune, D. Ducatteau, D. Pavlidis

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.11-12. ⟨hal-00828411⟩

  • Chapitre d'ouvrage

Modeling and design of BAW resonators and filters for integration in a UMTS transmitter

Matthieu Chatras, Stéphane Bila, S. Giraud, L. Catherinot, J. Fan, Dominique Cros, M. Aubourg, A. Flament, A. Frappé, B. Stefanelli, A. Kaiser, A. Cathelin, J.B. David, A. Reinhardt, L. Leyssenne, E. Kerhervé

Marco G. Beghi. Modeling and measurement methods for acoustic waves and for acoustic microdevices, InTech, pp.323-354, 2013, 978-953-51-1189-4. ⟨10.5772/56026⟩. ⟨hal-00878455⟩

  • Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed....

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩

  • Article dans une revue

Vertical nanowire array-based field effect transistors for ultimate scaling

G. Larrieu, X.L. Han

Nanoscale, 2013, 5, pp.2437-2441. ⟨10.1039/C3NR33738C⟩. ⟨hal-00797210⟩