Publicaciones

Affichage de 7731 à 7740 sur 16278


  • Communication dans un congrès

RF-MEMS reconfigurable GaAs MMICs and antennas for microwave/MM-wave applications

R. Malmqvist, R. Jonsson, C. Samuelsson, A. Gustafsson, S. Reyaz, D. Dancila, A. Rydberg, B. Grandchamp, S. Seok, M. Fryziel, P.A. Rolland, P. Rantakari, M. Lahti, T. Vaha-Heikkla, R. Baggen

This paper presents the results of some reconfigurable RF-MEMS switching circuits and antennas fabricated using GaAs MMIC and LTCC based processes. Wafer-level packaged GaAs RF-MEMS series and shunt switches demonstrating low losses (≤0.5 dB) up to 40 GHz are presented together with a compact Ka-...

International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9056, 83-88, ⟨10.1109/SMICND.2013.6688097⟩. ⟨hal-00922405⟩

  • Ouvrages

Physics, Astronomy and Engineering. Critical Problems in the History of Science and Society. Proceedings of 32nd Congress for The SISFA–Italian Society of Historians of Physics and Astronomy

Raffaele Pisano, Danilo Capecchi, Anna Lukešová

The Scientia Socialis UAB & Scientific Methodical Centre Scientia Educologica Press, 2013, 978-609-95513-0-2. ⟨hal-04517712⟩

  • Article dans une revue

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref

Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩

  • Communication dans un congrès

22 Gbps wireless communication system at 0.4 THz

Guillaume Ducournau, P. Szriftgiser, Fabio Pavanello, Philipp Latzel, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, Mohammed Zaknoune, Denis Bacquet, Jean-Francois Lampin

By combining a lJTC-PD as a THz emitter and a 400 G Hz Schottky-based heterodyne detection, we realized an indoor THz link working up to 22 Gbps at 400 GHz carrier frequency with ultra-low THz power. The eye diagram at receiver is clearly opened are the system is working with only 1 mu W received...

38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2013, Mainz, Germany. ⟨10.1109/IRMMW-THz.2013.6665491⟩. ⟨hal-03286171⟩

  • Article dans une revue

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, David Troadec, Jean-Paul Salvestrini, A. Ougazzaden

This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM...

Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00815384⟩

  • Communication dans un congrès

Analysis of ultrasonic reflection coefficient : application to adhesion measurement at solid/fluid or solid/solid interfaces

N. Collier, Dorothée Debavelaere-Callens, Pierre Campistron, Julien Carlier, Bertrand Nongaillard, Guillaume Delaplace

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944056⟩