Publicaciones

• Communication dans un congrès

A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC

A. Gustafsson, C. Samuelsson, R. Malmqvist, S. Seok, M. Fryziel, N. Rolland, B. Grandchamp, T. Vähä-Heikkilä, R. Baggen

This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0- level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6...

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC06-2, 432-435. ⟨hal-00922494⟩

• Communication dans un congrès

Rotational temperatures in RF plasma of Ar-H2O mixtures at low and moderated pressure

Adriana Annusova, Jaroslav Krištof, Corinne Foissac, Pavel Veis, Philippe Supiot

An Ar-H2O discharge with Ar content from 0 to 95 % at 67 and 266 Pa have been studied by optical emission spectroscopy. The plasma was excited at 27 MHz by a helical cavity with a power set at 30 W. The rotational temperatures of N2(C3Πu) and OH(A2 Σ + ) emitters were determined through spectral...

XXXI International Conference on Phenomena in Ionized Gases, XXXI ICPIG, 2013, Granada, Spain. paper PS1-036, 4 p. ⟨hal-00922590⟩

• Communication dans un congrès

High frequency noise characterisation of graphene FET Device

D. Mele, S. Fregonese, Sylvie Lepilliet, E. Pichonat, Gilles Dambrine, H. Happy

RF GFET devices have been processed on SiC wafer using Al2O3 as a gate oxide. These devices have been characterised with DC, S parameter and high frequency noise measurement (NF50). The noise parameters have been extracted in order to evaluate the graphene material for RF applications. This GFET...

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper TU3C-1, 4 p., ⟨10.1109/MWSYM.2013.6697561⟩. ⟨hal-00944030⟩

• Communication dans un congrès

Doped semiconductor nanocrystal junctions studied by Kelvin probe and non-contact atomic force microscopy

Lukasz Borowik, Thuat Nguyen-Tran, D. Deresmes, Heinrich Diesinger, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND~10^20-10^21 cm-3) hydrogen-passivated silicon nanocrystals (NCs) in the 2-50nm size range, using non-contact atomic force microscopy coupled to Kelvin probe...

Materials Research Society Fall Meeting, MRS Fall 2013, Symposium LL : Advances in Scanning Probe Microscopy, 2013, Boston, MA, United States. ⟨hal-00944018⟩

• Communication dans un congrès

Tunable locally resonant band gaps for surface acoustic waves and Lamb waves in a phononic crystal

N. Gasmi, Abdelkrim Talbi, Y. Du, M. Goueygou, Olivier Bou Matar

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944043⟩

• Communication dans un congrès

A 285 GHz sub-harmonic injection locked oscillator in 65nm CMOS technology

J. Moron Guerra, A. Siligaris, Jean-Francois Lampin, Francois Danneville, P. Vincent

A 285 GHz Sub Harmonic Injection Locked Oscillator (SHILO) is presented using a standard 65nm CMOS process. The architecture of this oscillator is based on the differential LC tank with push-push but adapted to obtain a third harmonic oscillation. The output power is -19 dBm at 285 GHz for a dc...

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper WE1F-4, 3 p., ⟨10.1109/MWSYM.2013.6697345⟩. ⟨hal-00944033⟩

• Communication dans un congrès

Theoretical and experimental study of multilayer piezo-magnetic structure based surface acoustic wave devices for high sensitivity magnetic sensor

Huan Zhou, Abdelkrim Talbi, Nicolas Tiercelin, Olivier Bou Matar

This study addresses the experimental and theoretical investigations of piezomagnetic acoustic waves propagating along the surface of a piezoelectric substrate on which a magnetostrictive thin film is deposited. The main objective of this work is to design high sensitivity surface acoustic wave...

IEEE International Ultrasonics Symposium, IUS 2013, Jul 2013, Prague, Czech Republic. paper IUS3-C-2, 212-215, ⟨10.1109/ULTSYM.2013.0055⟩. ⟨hal-00944036⟩

• Communication dans un congrès

Amplificateur de puissance GaN à haut rendement avec polarisation dynamique

F. Gamand, M.D. Li, Christophe Gaquière

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J1-DA2-2, 4 p. ⟨hal-00878391⟩

• Communication dans un congrès

A compact communication component for the 3G mobile networks

M. Ben Ahmed, M. Bouhorma, F. El Ouaai, A. Mamouni, A.A. Boudhir

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Morocco. papier 325, 1-4. ⟨hal-00804744⟩

• Article dans une revue

Nanometal plasmon polaritons

Abdellatif Akjouj, Gaëtan Lévêque, Sabine Szunerits, Yan Pennec, Bahram Djafari-Rouhani, Rabah Boukherroub, L. Dobrzynski

A nanometal is a nanometric metallic structure. A plasmon is a collective excitation of an electron gas. A plasmon polariton is a plasmon coupled to an electromagnetic wave. Whereas plasmons in bulk metal do not couple to light fields, a thin metal film can sustain surface polaritons when excited...

Surface Science Reports, 2013, 68, pp.1-67. ⟨10.1016/j.surfrep.2012.10.001⟩. ⟨hal-00796412⟩