Publicaciones

• Article dans une revue

Thermal conductivity from approach-to-equilibrium molecular dynamics

E. Lampin, Pier Luca Palla, P.A. Francioso, F. Cleri

We use molecular dynamics simulations to study the thermal transport properties of a range of poor to good thermal conductors by a method in which two portions are delimited and heated at two different temperatures before the approach-to-equilibrium in the whole structure is monitored. The...

Journal of Applied Physics, 2013, 114 (3), pp.033525. ⟨10.1063/1.4815945⟩. ⟨hal-00871995⟩

• Communication dans un congrès

Effet des contraintes sur les propriétés électroniques de jonctions moléculaires sur nanocristaux d'or de taille inférieure à 10 nm

N. Clement, S. Desbief, K. Smaali, J.P. Nys, P. Leclere, D. Vuillaume

Matériaux et Nanostructures π-Conjugués, MNPC 13, 2013, Annecy, France. ⟨hal-00878939⟩

• Communication dans un congrès

Organic/nanoparticles synapstor (synapse-transistor) for neuro-inspired computing architecture and biocompatible synapse prosthesis

S. Desbief, A. Kyndiah, M. Murgia, T. Cramer, F. Biscarini, David Guérin, S. Lenfant, F. Alibart, D. Vuillaume

12th European Conference on Molecular Electronics, ECME 2013, 2013, London, United Kingdom. ⟨hal-00878799⟩

• Article dans une revue

Towards an ab-initio description of the charge transfer between a proton and a lithium fluoride surface : a quantum chemistry approach

P. Tiwald, S. Gräfe, J. Burgdörfer, L. Wirtz

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013, 317, pp.18-22. ⟨10.1016/j.nimb.2012.12.097⟩. ⟨hal-00913584⟩

• Article dans une revue

Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

H. Mosbahi, M. Gassoumi, H. Mejri, I. Saidi, Christophe Gaquière, M.A. Zaidi, H. Maaref

Current Applied Physics, 2013, 13, pp.1359-1364. ⟨10.1016/j.cap.2013.04.003⟩. ⟨hal-00872006⟩

• Article dans une revue

Substrate mode-integrated SPR sensor

C. Lenaerts, Jean-Pierre Vilcot, J. Hastanin, B. Pinchemel, Sophie Maricot, S. Habraken, N. Maalouli, E. Wijaya, M. Bouazaoui, J. Hottin, C. Desfours, K. Fleury-Frenette

Plasmonics, 2013, 8, pp.1203-1208. ⟨10.1007/s11468-013-9533-y⟩. ⟨hal-00823963⟩

• Communication dans un congrès

News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩

• Communication dans un congrès

Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩

• Article dans une revue

Guided-wave electro-optic characterization of BaTiO3 thin films using the prism coupling technique

Floriane Leroy, Anthony Rousseau, Sandrine Payan, El Hadj Dogheche, David Jenkins, Didier Decoster, Mario Maglione

Ferroelectric BaTiO3 (BTO) thin films are grown by RF sputtering onto an indium tin oxide bottom electrode on a MgO single-crystal substrate. We have studied here the optical properties by the prism coupling technique. We report the ordinary and extraordinary refractive indices of the films, the...

Optics Letters, 2013, 38 (7), pp.1037-1039. ⟨10.1364/OL.38.001037⟩. ⟨hal-00804978⟩

• Article dans une revue

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref

Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩