Publicaciones

• Article dans une revue

A fully distributed non linear waveguide using (Pb,Sr)TiO3 thin film : second and third harmonics generation

Freddy Ponchel, Ludovic Burgnies, D. Ducatteau, Eric Lheurette, Denis Remiens, D. Lippens

We report on the experimental investigation of a non-linear (NL) Co-Planar Waveguide (CPW) fabricated by means of a ferroelectric film. In contrast to conventional NL-CPW, periodically loaded by lumped varactors, the tunable ferroelectric material is fully distributed along the propagation...

Journal of Applied Physics, 2013, 114 (19), pp.194103. ⟨10.1063/1.4831660⟩. ⟨hal-00906041⟩

• Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever...

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩

• Communication dans un congrès

Determination of the whole-body absorption cross section of a phantom using RiMAX

Aliou Bamba, Wout Joseph, Emmeric Tanghe, Luc Martens, Davy Gaillot, M. Lienard

The reverberation time has been measured in a reverberation chamber for different loads and for a cross polarized transceiver at the frequency of 1.8 GHz. We determine the whole-body absorption cross section of a canonical phantom using a maximum-likehood high-resolution channel parameters...

IEEE Antennas and Propagation Society International Symposium, AP-S/URSI 2013, Jul 2013, Orlando, FL, United States. paper 306.7, 716-717, ⟨10.1109/APS.2013.6711018⟩. ⟨hal-00957771⟩

• Article dans une revue

Revisited RF compact model of gate resistance suitable for high-K/metal gate technology

B. Dormieu, P. Scheer, C. Charbuillet, H. Jaouen, Francois Danneville

IEEE Transactions on Electron Devices, 2013, 60, pp.13-19. ⟨10.1109/TED.2012.2225146⟩. ⟨hal-00795950⟩

• Article dans une revue

Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

Journal of Nanoscience and Nanotechnology, 2013, 13, pp.771-775. ⟨10.1166/jnn.2013.6115⟩. ⟨hal-00795954⟩

• Article dans une revue

Shift and torsion contact problems for arbitrary axisymmetric normal stress distributions

Grey Sh Boltachev, Vladislav Aleshin

In this paper, we analyze the contact interaction of axisymmetric particles subject to a subsequent application of a constant normal load and a tangential or rotational force. A rigorous solution to the frictional contact problem is given by the known Jäger theorem that presents a relationship...

International Journal of Solids and Structures, 2013, 50, pp.2894-2900. ⟨10.1016/j.ijsolstr.2013.05.004⟩. ⟨hal-00871907⟩

• Article dans une revue

Multiple exciton generation and ultrafast exciton dynamics in HgTe colloidal quantum dots

Ali Al-Otaify, Stephen V. Kershaw, Shuchi Gupta, Andrey L. Rogach, Guy Allan, Christophe Delerue, David J. Binks

The investigation of sub-nanosecond exciton dynamics in HgTe colloidal quantum dots using ultrafast transient absorption spectroscopy is reported. The transmittance change spectrum acquired immediately after pumping is dominated by a bleach blue-shifted by ∼200–300 nm from the photoluminescent...

Physical Chemistry Chemical Physics, 2013, 15, pp.16864-16873. ⟨10.1039/C3CP52574K⟩. ⟨hal-00871970⟩

• Article dans une revue

Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice

J.Y. Song, S. Bouchoule, G. Patriarche, E. Galopin, A.M. Yacomotti, E. Cambril, Q.G. Kou, David Troadec, J.J. He, J.C. Harmand

The wet oxidation from the mesa sidewalls of AlGaAs/GaAs epitaxial structures is investigated in details. In addition to the intended lateral oxidation of the Al-rich buried layer, we observe a parasitic vertical oxidation of the adjacent layers of lower Al content. This vertical oxidation produces...

Physica Status Solidi A (applications and materials science), 2013, 210, pp.1171-1177. ⟨10.1002/pssa.201228770⟩. ⟨hal-00872060⟩

• Article dans une revue

Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon

Esther Alarcon Llado, Sònia Conesa-Boj, X. Wallart, Philippe Caroff, Anna Fontcuberta I Morral

Thanks to their wide band structure tunability, GaAs1−xSbx nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their optical and electronic properties. Raman...

Nanotechnology, 2013, 24, pp.405707-1-7. ⟨10.1088/0957-4484/24/40/405707⟩. ⟨hal-00871906⟩

• Article dans une revue

Analytical procedure for determining the linear and nonlinear effective properties of the elastic composite cylinder

S. Giordano

International Journal of Solids and Structures, 2013, 50, pp.4055-4069. ⟨10.1016/j.ijsolstr.2013.08.017⟩. ⟨hal-00871911⟩