Publicaciones

• Communication dans un congrès

Technique interférométrique pour la caractérisation diélectrique en milieu liquide par ligne coaxiale ouverte

H. Balki, M. Moutaoukil, Kamel Haddadi, T. Lasri

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Maroc. papier 266, 1-4. ⟨hal-00804745⟩

• Communication dans un congrès

Performance analysis of OCDMA systems with 2-D optical codes in MMF channels

H. Mrabet, Iyad Dayoub, R. Attia

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Morocco. papier 252, 1-4. ⟨hal-00804740⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the...

43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩

• Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever...

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩

• Article dans une revue

Multiple exciton generation and ultrafast exciton dynamics in HgTe colloidal quantum dots

Ali Al-Otaify, Stephen V. Kershaw, Shuchi Gupta, Andrey L. Rogach, Guy Allan, Christophe Delerue, David J. Binks

The investigation of sub-nanosecond exciton dynamics in HgTe colloidal quantum dots using ultrafast transient absorption spectroscopy is reported. The transmittance change spectrum acquired immediately after pumping is dominated by a bleach blue-shifted by ∼200–300 nm from the photoluminescent...

Physical Chemistry Chemical Physics, 2013, 15, pp.16864-16873. ⟨10.1039/C3CP52574K⟩. ⟨hal-00871970⟩

• Article dans une revue

Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice

J.Y. Song, S. Bouchoule, G. Patriarche, E. Galopin, A.M. Yacomotti, E. Cambril, Q.G. Kou, David Troadec, J.J. He, J.C. Harmand

The wet oxidation from the mesa sidewalls of AlGaAs/GaAs epitaxial structures is investigated in details. In addition to the intended lateral oxidation of the Al-rich buried layer, we observe a parasitic vertical oxidation of the adjacent layers of lower Al content. This vertical oxidation produces...

Physica Status Solidi A (applications and materials science), 2013, 210, pp.1171-1177. ⟨10.1002/pssa.201228770⟩. ⟨hal-00872060⟩

• Article dans une revue

Thermal effects in magnetoelectric memories with stress-mediated switching

S. Giordano, Yannick Dusch, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensky

Journal of Physics D: Applied Physics, 2013, 46, pp.325002-1-12. ⟨10.1088/0022-3727/46/32/325002⟩. ⟨hal-00871920⟩

• Article dans une revue

Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

Journal of Nanoscience and Nanotechnology, 2013, 13, pp.771-775. ⟨10.1166/jnn.2013.6115⟩. ⟨hal-00795954⟩

• Article dans une revue

Dielectric properties by rectangular waveguide

M.D. Belrhiti, S. Bri, A. Nakheli, A. Mamouni

International Journal of Emerging Sciences, 2013, 3, pp.163-171. ⟨hal-00872091⟩

• Communication dans un congrès

Modeling of surface acoustic wave scattering from the system of topographic irregularities comparable with the wavelength

Sergey Yankin

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. papier 196, 4 p. ⟨hal-00957777⟩