Publicaciones

• Article dans une revue

Revisited RF compact model of gate resistance suitable for high-K/metal gate technology

B. Dormieu, P. Scheer, C. Charbuillet, H. Jaouen, Francois Danneville

IEEE Transactions on Electron Devices, 2013, 60, pp.13-19. ⟨10.1109/TED.2012.2225146⟩. ⟨hal-00795950⟩

• Article dans une revue

A fully distributed non linear waveguide using (Pb,Sr)TiO3 thin film : second and third harmonics generation

Freddy Ponchel, Ludovic Burgnies, D. Ducatteau, Eric Lheurette, Denis Remiens, D. Lippens

We report on the experimental investigation of a non-linear (NL) Co-Planar Waveguide (CPW) fabricated by means of a ferroelectric film. In contrast to conventional NL-CPW, periodically loaded by lumped varactors, the tunable ferroelectric material is fully distributed along the propagation...

Journal of Applied Physics, 2013, 114 (19), pp.194103. ⟨10.1063/1.4831660⟩. ⟨hal-00906041⟩

• Article dans une revue

Shift and torsion contact problems for arbitrary axisymmetric normal stress distributions

Grey Sh Boltachev, Vladislav Aleshin

In this paper, we analyze the contact interaction of axisymmetric particles subject to a subsequent application of a constant normal load and a tangential or rotational force. A rigorous solution to the frictional contact problem is given by the known Jäger theorem that presents a relationship...

International Journal of Solids and Structures, 2013, 50, pp.2894-2900. ⟨10.1016/j.ijsolstr.2013.05.004⟩. ⟨hal-00871907⟩

• Article dans une revue

Analytical procedure for determining the linear and nonlinear effective properties of the elastic composite cylinder

S. Giordano

International Journal of Solids and Structures, 2013, 50, pp.4055-4069. ⟨10.1016/j.ijsolstr.2013.08.017⟩. ⟨hal-00871911⟩

• Article dans une revue

An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements

Thomas Dargent, Kamel Haddadi, T. Lasri, N. Clément, D. Ducatteau, Bernard Legrand, H. Tanbakuchi, Didier Theron

We report on an adjustable interferometric set-up for Scanning Microwave Microscopy. This interferometer is designed in order to combine simplicity, a relatively flexible choice of the frequency of interference used for measurements as well as the choice of impedances range where the interference...

Review of Scientific Instruments, 2013, 84 (12), pp.123705. ⟨10.1063/1.4848995⟩. ⟨hal-00922585⟩

• Communication dans un congrès

Technique interférométrique pour la caractérisation diélectrique en milieu liquide par ligne coaxiale ouverte

H. Balki, M. Moutaoukil, Kamel Haddadi, T. Lasri

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Maroc. papier 266, 1-4. ⟨hal-00804745⟩

• Communication dans un congrès

Performance analysis of OCDMA systems with 2-D optical codes in MMF channels

H. Mrabet, Iyad Dayoub, R. Attia

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Morocco. papier 252, 1-4. ⟨hal-00804740⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the...

43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩

• Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever...

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩

• Article dans une revue

Multiple exciton generation and ultrafast exciton dynamics in HgTe colloidal quantum dots

Ali Al-Otaify, Stephen V. Kershaw, Shuchi Gupta, Andrey L. Rogach, Guy Allan, Christophe Delerue, David J. Binks

The investigation of sub-nanosecond exciton dynamics in HgTe colloidal quantum dots using ultrafast transient absorption spectroscopy is reported. The transmittance change spectrum acquired immediately after pumping is dominated by a bleach blue-shifted by ∼200–300 nm from the photoluminescent...

Physical Chemistry Chemical Physics, 2013, 15, pp.16864-16873. ⟨10.1039/C3CP52574K⟩. ⟨hal-00871970⟩