Publicaciones

• Communication dans un congrès

UWB channel modeling for objects evolving in impulsive environnements

Nourddine Azzaoui, Laurent Clavier

We consider channel modeling issues in the context where communicating objects are evolving in impulsive environments. It was shown recently that α-stable random processes are attractive solution for representing the ultra wide band communication channel in relatively large spatial areas. In this...

Wireless Communications and Networking Conference Workshops (WCNCW), 2012 IEEE, 2012, France. pp.191 - 195, ⟨10.1109/GLOCOMW.2010.5700305⟩. ⟨hal-00732995⟩

• Communication dans un congrès

A 60 GHz transceiver for low power ad hoc networks

Christophe Loyez, N. Rolland, Michael Bocquet

IEEE International Conference on Green Computing and Communications, GreenCom 2012, Workshop on Energy and Wireless Sensors, e-WiSe 2012, 2012, Besançon, France. pp.session 2 : Power Management, 671-674, ⟨10.1109/GreenCom.2012.108⟩. ⟨hal-00811708⟩

• Proceedings/Recueil des communications

Il Trattato di Fortificazione di Galileo Galilei (Galileio Galilei's Trattato di Fortificazione)

Raffaele Pisano, Danilo Capecchi

Proceedings of the 4th History of Engineering Conference, I, Cuzzolin, pp.77-90, 2012, 978-88-87479-48-5. ⟨hal-04514409⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of a N-2-Ar mixture discharge created by an RF helical coupling device: I. Kinetics of N-2(B (3)Pi(g)) and N-2(C (3)Pi(u)) states

Foissac C, Kristof J, Annusova A, Veis P, Supiot P

Plasma Sources Sci. Technol., 2012, 21, ⟨10.1088/0963-0252/21/5/055021⟩. ⟨hal-03090542⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of a N-2-Ar mixture discharge created by an RF helical coupling device: II. Vibrational distribution of the N-2(C (3)Pi(u), nu '') state

Annusova A, Foissac C, Kristof J, Veis P, Supiot P

Plasma Sources Sci. Technol., 2012, 21, ⟨10.1088/0963-0252/21/5/055022⟩. ⟨hal-03090546⟩

• Article dans une revue

First demonstration of high-power GaN-on-silicon transistors at 40 GHz

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage...

IEEE Electron Device Letters, 2012, 33 (8), pp.1168-1170. ⟨10.1109/LED.2012.2198192⟩. ⟨hal-00786912⟩

• Article dans une revue

Mechanism of ohmic Cr/Ni/Au contact formation on p-GaN

L. Magdenko, G. Patriarche, David Troadec, O. Mauguin, E. Morvan, M.A. Di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane

Journal of Vacuum Science and Technology, 2012, 30, pp.022205-1-5. ⟨10.1116/1.3688486⟩. ⟨hal-00788195⟩

• Communication dans un congrès

Contact mechanics based on Preisach analysis

Vladislav Aleshin

The origin of acoustic contact nonlinearity is in nonlinear force-displacement relationships for mechanical contacts between solids or surfaces. The response of a particular contact depends on shapes of contacting surfaces (regular or random) as well as on external excitation (normal and/or...

European GDR-Workshop on Nonlinearities in Acoustics, 2012, Nice, France. ⟨hal-00819461⟩

• Article dans une revue

In situ silicon-integrated tuner for automated on-wafer mmW noise parameters extraction using multi-impedance method for transistor characterization

Y. Tagro, N. Waldhoff, D. Gloria, S. Boret, Gilles Dambrine

IEEE Transactions on Semiconductor Manufacturing, 2012, 25, pp.170-177. ⟨10.1109/TSM.2011.2181673⟩. ⟨hal-00819467⟩

• Article dans une revue

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-...