Publicaciones

• Communication dans un congrès

Photo-modulated field emission of carbon nanotubes cold cathodes

F. Andrianiazy, J.P. Mazellier, L . Gangloff, P. Legagneux, P. Ponnard, N. Martinez, C . Bourat, X.L. Han, Jean-Francois Lampin

25th International Vacuum Nanoelectronics Conference, IVNC 2012, 2012, Jeju, South Korea. pp.46-49, ⟨10.1109/IVNC.2012.6316834⟩. ⟨hal-00803103⟩

• Communication dans un congrès

Nucleation mechanisms of self-catalyzed nanowires on silicon

E. Russo-Averchi, J. Arbiol, E. Uccelli, P. Krogstrup, S. Conesa-Boj, A. Dalmau I Mallorqui, M. Heiss, D. Ruffer, J. Nygard, J.R. Morante, P. Caroff, A. Fontcuberta I Morral

6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia. ⟨hal-00797370⟩

• Communication dans un congrès

Influence of Sb overpressure on the anisotropic transport properties of InAs/AlSb heterostructures grown on highly mismatched substrates

S. El Kazzi, L. Desplanque, Y. Wang, P. Ruterana, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2012, Symposium G : Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II, 2012, San Francisco, CA, United States. ⟨hal-00797368⟩

• Communication dans un congrès

Phononic and phoxonic crystal slabs sensors

Bahram Djafari-Rouhani, Yan Pennec, R. Lucklum

SPIE Photonics Europe, Photonic Crystal Materials and Devices, 2012, Brussels, Belgium. ⟨hal-00798094⟩

• Article dans une revue

Bilayer Cr/Au contacts on n-GaN

L. Dobos, L. Toth, B. Pecz, Z.J. Horvath, Z.E. Horvath, A.L. Toth, B. Beaumont, Z. Bougrioua

Vacuum, 2012, 86, pp.769-772. ⟨10.1016/j.vacuum.2011.07.027⟩. ⟨hal-00790436⟩

• Proceedings/Recueil des communications

LT GaAs nanophotoswitches for microwave sampling

Didier Decoster, Antoine Pagies, Jean-Francois Lampin, X. Wallart, Vincent Magnin, Joseph Harari, Charlotte Tripon-Canseliet, S. Faci, Stéphane Formont, Loic Ménager, Jean Chazelas, Guy Jestin

SPIE 2012 Photonics West, Quantum Sensing and Nanophotonic Devices IX, 8268-83, 2012. ⟨hal-04444977⟩

• Communication dans un congrès

Patterning process and actuation in open air of micro-beam actuator based on conducting IPNs

Alexandre Khaldi, Cedric Plesse, Caroline Soyer, Claude Chevrot, Dominique Teyssie, Frederic Vidal, Eric Cattan

SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2012, San Diego, United States. ⟨10.1117/12.915086⟩. ⟨hal-01829117⟩

• Communication dans un congrès

Optimization of electrodes design for PZT thin-film actuated membranes

F. Casset, H. Michaud, T. Ricart, G. Le Rhun, M. Cueff, J. Abergel, P. Ancey, D. Faralli, Arnaud Devos, S. Fanget, E. Defay

This paper reports on the optimization of electrodes design for sol-gel Pb(Zr0.52, Ti0.48)O3 (PZT) thin-film actuated-membranes. PZT can be used in many actuator applications such as micro mirror, RF MEMS, inkjet or loudspeaker due to its strong piezoelectric properties. We aim to design membrane-...

26th European Conference on Solid-State Transducers, Eurosensors XXVI, Sep 2012, Kraków, Poland. pp.108-111, ⟨10.1016/j.proeng.2012.09.096⟩. ⟨hal-00801141⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:...

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Article dans une revue

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J.L. Codron, Y. Wang, P. Ruterana, G. Moschetti, J. Grahn, X. Wallart

Applied Physics Letters, 2012, 100, pp.262103-1-4. ⟨10.1063/1.4730958⟩. ⟨hal-00786990⟩