Publicaciones

• Communication dans un congrès

Analysis of ultrasonic reflection coefficient : application to adhesion measurement at solid/liquid interface

N. Collier, Dorothée Debavelaere-Callens, Pierre Campistron, Julien Carlier, Bertrand Nongaillard, Guillaume Delaplace

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. ⟨hal-00798848⟩

• Autre publication scientifique

Étude de HEMTs AlGaN/GaN à grand développement pour la puissance hyperfréquence : conception et fabrication, caractérisation et fiabilité

Yannick Douvry

2012. ⟨hal-00799322⟩

• Article dans une revue

Non-radiative complete surface acoustic wave bandgap for finite-depth holey phononic crystal in lithium niobate

Didit Yudistira, Yan Pennec, Bahram Djafari-Rouhani, Samuel Dupont, Vincent Laude

We demonstrate the existence of non-radiative complete surface acoustic wave(SAW)bandgaps for two-dimensional piezoelectric phononic crystals of holes. Holes of finite depth in a semi-infinite LiNbO3 substrate are specifically considered. SAWbandgaps are determined from the band structure...

Applied Physics Letters, 2012, 100, pp.061912. ⟨10.1063/1.3684839⟩. ⟨hal-00759306⟩

• Communication dans un congrès

Study of rough surface to decrease reverberation noise in ultrasonic imaging

Jin-Ying Zhang, G. Han, S.M. Chen, Y. Qian, Wei-Jiang Xu, Julien Carlier, Bertrand Nongaillard

Rough back surface is investigated to decrease the reverberation noise in ultrasonic imaging. Silicon crystal is selected as the backing substrate of the ultrasonic transducer because rough structure is convenient to be fabricated on silicon substrate using microfabrication technologies. Different...

10th IEEE International New Circuits and Systems Conference, NEWCAS 2012, 2012, Montréal, QC, Canada. pp.509-512, ⟨10.1109/NEWCAS.2012.6329068⟩. ⟨hal-00803090⟩

• Communication dans un congrès

4-port isolated MOS modeling and extraction for mmW applications

B. Dormieu, P. Scheer, C. Charbuillet, S. Jan, Francois Danneville

38th European Solid-State Circuits Conference, ESSCIRC 2012, 2012, Bordeaux, France. joint ESSDERC/ESSCIRC session B3L-A, paper ID 3149, 38-41, ⟨10.1109/ESSCIRC.2012.6341251⟩. ⟨hal-00801044⟩

• Communication dans un congrès

High frequency noise potentialities of reported CMOS 65 nm SOI technology on flexible substrate

Y. Tagro, A. Lecavelier Des Etangs-Levallois, L. Poulain, Sylvie Lepilliet, D. Gloria, C. Raynaud, Emmanuel Dubois, Francois Danneville

12th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems, SiRF 2012, 2012, Santa Clara, CA, United States. pp.89-92, ⟨10.1109/SiRF.2012.6160147⟩. ⟨hal-00801054⟩

• Communication dans un congrès

Lattice matched and pseudomorphic InGaAs MOSHEMT with fT of 200GHz

J.J. Mo, Nicolas Wichmann, Yannick Roelens, M. Zaknoune, L. Desplanque, X. Wallart, S. Bollaert

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.44-47, ⟨10.1109/ICIPRM.2012.6403314⟩. ⟨hal-00801055⟩

• Communication dans un congrès

High frequency epitaxial graphene fields effect transistors (GFET) on SiC

D. Mele, E. Pichonat, S. Fregonese, A. Ouerghi, H. Happy

13th Trends in Nanotechnology International Conference, TNT2012, 2012, Madrid, Spain. pp.1-2. ⟨hal-00801050⟩

• Communication dans un congrès

Investigation of structural, morphological and optical properties of GaN/AlGaN heterostructures on Si

I. Saraswati, N.R. Poepawati, W.P. Retno, El Hadj Dogheche, Didier Decoster, S. Ko, Y.H. Cho, L. Considine, D. Pavlidis

Photonics Global Conference, PGC 2012, 2012, Sentosa, Singapore. pp.1-5, ⟨10.1109/PGC.2012.6458110⟩. ⟨hal-00801116⟩

• Communication dans un congrès

PZT piezoelectric coefficient extraction by PZT-actuated micro-beam characterization and modeling

F. Casset, M. Cueff, A. Suhm, G. Le Rhun, J. Abergel, M. Allain, C. Dieppedale, T. Ricart, S. Fanget, P. Renaux, D. Faralli, P. Ancey, Arnaud Devos, E. Defay

13th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012, 2012, Cascais, Portugal. pp.1-4, ⟨10.1109/ESimE.2012.6191704⟩. ⟨hal-00801130⟩