Publicaciones
Affichage de 8111 à 8120 sur 16064
Analysis of surface charging effects in passivated AlGaN/GaN HEMTS on SiC substrate
M. Gassoumi, O. Fathalla, B. Grimbert, Christophe Gaquière, H. Maaref
11th Expert Meeting on Evaluation & Control of Coumpound Semiconductor Materials and Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00802567⟩
3D numerical simulation of the stirrer effect inside a reverberation chamber
S. Lup, C. Munteanu, S. Baranowski, L. Koné
7th International Conference and Exposition on Electrical and Power Engineering, EPE 2012, 2012, Iasi, Romania. pp.672-675, ⟨10.1109/ICEPE.2012.6463855⟩. ⟨hal-00802586⟩
The vibration dipole : a time reversed acoustics scheme for the experimental localisation of surface breaking cracks
B. van Damme, K. van den Abeele, Olivier Bou Matar
Applied Physics Letters, 2012, 100, pp.084103-1-3. ⟨10.1063/1.3690043⟩. ⟨hal-00787355⟩
Impurity-limited mobility and variability in gate-all-around silicon nanowires
Y.M. Niquet, H. Mera, C. Delerue
Applied Physics Letters, 2012, 100, pp.153119-1-4. ⟨10.1063/1.4704174⟩. ⟨hal-00787840⟩
Simple and low-cost fabrication of PDMS microfluidic round channels by surface-wetting parameters optimization
Magalie de Ville, Philippe Coquet, Philippe Brunet, Rabah Boukherroub
Microfluidics and Nanofluidics, 2012, 12, pp.953-961. ⟨10.1007/s10404-011-0929-8⟩. ⟨hal-00788300⟩
Technique multi-port pour la microscopie champ proche microonde
Kamel Haddadi, T. Lasri
2èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S8, papier ID18, 1-4. ⟨hal-00806622⟩
Cavity-type hypersonic phononic crystals
A. Sato, Yan Pennec, T. Yanagishita, H. Masuda, W. Knoll, Bahram Djafari-Rouhani, G. Fytas
New Journal of Physics, 2012, 14, pp.113032. ⟨10.1088/1367-2630/14/11/113032⟩. ⟨hal-00787468⟩
Role of hydration on the electronic transport through molecular junctions on silicon
N. Clement, David Guérin, S. Pleutin, S. Godey, D. Vuillaume
Journal of Physical Chemistry C, 2012, 116 (33), pp.17753-17763. ⟨10.1021/jp3018106⟩. ⟨hal-00787370⟩
Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer
L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart
Applied Physics Letters, 2012, 101, pp.142111-1-4. ⟨10.1063/1.4758292⟩. ⟨hal-00787025⟩
Conductance statistics from a large array of sub-10 nm molecular junctions
K. Smaali, N. Clement, G. Patriarche, D. Vuillaume
ACS Nano, 2012, 6, pp.4639-4647. ⟨10.1021/nn301850g⟩. ⟨hal-00787368⟩