Publicaciones

• Article dans une revue

Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors

N. Clement, G. Larrieu, Emmanuel Dubois

Investigation of low-frequency noise in nanoscale Schottky-barrier (SB)-based field-effect transistors (SB-FETs) is of prime importance due to its large amplitude in emerging bottom-up devices. In addition, noise can give additional information on charge transport mechanisms. In this paper, we...

IEEE Transactions on Electron Devices, 2012, 59 (1), pp.180-187. ⟨10.1109/TED.2011.2169676⟩. ⟨hal-00787365⟩

• Autre publication scientifique

Caractérisation de l'endommagement des composites à matrice polymère par une approche multi-technique non destructive

Walid Harizi

2012. ⟨hal-00799379⟩

• Autre publication scientifique

Contribution à l'étude et à la correction de la diaphonie dans les réseaux de transducteurs piézoélectriques pour l'imagerie médicale

Abdelmajid Bybi

2012. ⟨hal-00799377⟩

• Article dans une revue

High-performance modulation-doped heterostructure-thermopiles for uncooled infrared image-sensor application

M. Abe, N. Kogushi, K.S. Ang, R. Hofstetter, K. Manoj, L.N. Retnam, H. Wang, G.I. Ng, C. Jin, D. Pavlidis

IEICE Transactions on Electronics, 2012, E95-C, pp.1354-1362. ⟨10.1587/transele.E95.C.1354⟩. ⟨hal-00790416⟩

• Article dans une revue

Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications

Etienne Herth, H Desré, Emmanuelle Algré, Christiane I. Legrand, Tuami Lasri

The aim of this work is to determine optimal deposition parameters of silicon nitride for optical applications. The authors present the investigation of hydrogenated amorphous silicon nitride SiNx:H deposited by the low temperature PECVD method in high frequency reactors. The study of hydrogen...

Microelectronics Reliability, 2012, 52 (1), pp.141-146. ⟨10.1016/j.microrel.2011.09.004⟩. ⟨hal-02300326⟩

• Communication dans un congrès

Narrow linewidth tunable THz signal radiated by 1.55 µm photomixing

Alain Rolland, Guillaume Ducournau, Goulc'Hen Loas, Alexandre Beck, Fabio Pavanello, Emilien Peytavit, Tahsin Akalin, Mohammed Zaknoune, Jean-Francois Lampin, Marc Brunel, François Bondu, Marc Vallet, Mehdi Alouini

THz has become a wide field of investigation opening new opportunities in a growing number of domains of physics, chemistry, and biology. Among the different techniques existing today to generate THz fields, heterodyning two optical frequencies is a useful approach when tunability is required....

SPIE Optics + Photonics, Terahertz Emitters, Receivers, and Applications III, 2012, San Diego, CA, United States. pp.84960C-1-7, ⟨10.1117/12.929738⟩. ⟨hal-00803097⟩

• Article dans une revue

UWB communication system based on bipolar PPM with orthogonal waveforms

A. Elabed, F. Elbahhar, Yassin El Hillali, Atika Rivenq, Raja Elassali

Wireless Engineering and Technology, 2012, 3, pp.181-188. ⟨10.4236/wet.2012.33026⟩. ⟨hal-00788184⟩

• Article dans une revue

A parallel concatenated convolutional-based distributed coded cooperation scheme for relay channels

H. Ben Chikha, S. Chaoui, Iyad Dayoub, Jean-Michel Rouvaen, R. Attia

Wireless Personal Communications, 2012, 67, pp.951-969. ⟨10.1007/s11277-011-0433-1⟩. ⟨hal-00788179⟩

• Article dans une revue

High power density performances of SiGe HBT from BiCMOS technology at W-band

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière

IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩

• Article dans une revue

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩