Publicaciones

• Communication dans un congrès

Permittivité diélectrique des liquides dans la bande X

M.D. Belrhiti, S. Bri, A. Nakheli, M. Haddad, A. Mamouni

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S8, papier ID10, 1-4. ⟨hal-00806621⟩

• Communication dans un congrès

State of the art 200 GHz power measurements on SiGe:C HBT using an innovative load pull measurement setup

A. Pottrain, T. Lacave, D. Gloria, P. Chevalier, Christophe Gaquière

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6259409⟩. ⟨hal-00801191⟩

• Communication dans un congrès

Diagnostic prediction of transmitted speech quality : a new framework for signal-based and parametric models

S. Möller, M. Wältermann, N. Côté

13th Annual Conference of the International Speech Communication Association, InterSpeech 2012, 2012, Portland, OR, United States. CD-ROM, paper Tue.P4b.02, 927-930. ⟨hal-00823458⟩

• Communication dans un congrès

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

G. Moschetti, P. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.57-60, ⟨10.1109/ICIPRM.2012.6403318⟩. ⟨hal-00801079⟩

• Communication dans un congrès

[Invited] New generation of flexible GHz graphene transistor

H. Happy, C. Sire, F. Ardiaca, Sylvie Lepilliet, J.W.T. Seo, M.C. Hersam, Gilles Dambrine, Vincent Derycke

19th International Display Workshops joint with Asia Display 2012, IDW/AD'12, 2012, Kyoto, Japan. pp.139-140. ⟨hal-00801045⟩

• Communication dans un congrès

160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management

Stéphane Piotrowicz, Olivier Jardel, Jean-Claude Jacquet, D. Lancereau, Raphaël Aubry, Erwan Morvan, Nicolas Sarazin, Jérémy Dufraisse, Charu Dua, Mourad Oualli, Eric Chartier, Marie-Antoinette Di Forte-Poisson, Christophe Gaquière, Sylvain Laurent Delage

We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power...

34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, Oct 2012, La Jolla, CA, United States. pp.1-4, ⟨10.1109/CSICS.2012.6340059⟩. ⟨hal-00801142⟩

• Communication dans un congrès

Comparaison de deux modèles de prédiction de la qualité vocale en contexte super-large bande

N. Côté, S. Möller, T. Mannoury

Deuxièmes Journées Perception Sonore, JPS 2012, 2012, Marseille, France. ⟨hal-00823448⟩

• Communication dans un congrès

Band offsets : nano is not bulk

Y.M. Niquet, C. Delerue

15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.3-4. ⟨hal-00801124⟩

• Communication dans un congrès

Investigation on the optical gain and threshold current density of Ga1-xInxAs1-y-zNySbz/GaAs strained quantum wells laser

Abdelkader Aissat, Said Nacer, Farid Ykhlef, Jean-Pierre Vilcot

The aim of this work is to exploit the properties of the GaInAsNSb/GaAs alloy compressive highly strain structure. Ga 1-x In x As 1-y-z N y Sb z has been found to be a potentially superior material to GaInAsN for optical fiber communications long wavelength laser (VCSELs) applications. Indeed, this...

3rd International Conference on Multimedia Computing and Systems, ICMCS'12, 2012, Tangier, Morocco. pp.1083-1086, ⟨10.1109/ICMCS.2012.6320124⟩. ⟨hal-00801123⟩

• Communication dans un congrès

Piezo-resistive ring-shaped AFM sensors with pico-newton force resolution

Z. Xiong, B. Walter, E. Mairiaux, M. Faucher, L. Buchaillot, Bernard Legrand

2nd International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2012, 2012, Xi'an, China. Paper ID 1200991, Best application paper award, 184-189. ⟨hal-00801105⟩