Publicaciones

• Communication dans un congrès

Development and simulation of a structure based on CuIn1-xGaxSe2 semiconductors alloys for a new generation of photovoltaic cells

Abdelkader Aissat, M. Fathi, Jean-Pierre Vilcot

The aim of our study is the development and simulation of thin films structure based on CuIn1-xGaxSe2 semiconductors alloys to improve the conversion efficiency of solar cells. We studied and simulated the variation effect of the Gallium concentration on some physical and electrical properties (...

International Conference on Clean Energy Solutions for Sustainable Environment, TerraGreen12, 2012, Beirut, Lebanon. pp.197-204, ⟨10.1016/j.egypro.2012.05.031⟩. ⟨hal-00801115⟩

• Communication dans un congrès

Performances study of micropower UWB radar using orthogonal waveforms

Laila Sakkila, Atika Rivenq, Yassin El Hillali, C. Tatkeu

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. paper ID 52, 267-271. ⟨hal-00802545⟩

• Communication dans un congrès

UWB cooperative radar for location and communication dedicated to railway transport

T. Tahri, Yassin El Hillali, Atika Rivenq

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. paper ID 42, 263-266. ⟨hal-00802557⟩

• Communication dans un congrès

TEM analysis of ZnO nanostructures and epitaxial layers grown by MOCVD

J.P. Biethan, L. Considine, D. Pavlidis, A. Addad, David Troadec, El Hadj Dogheche

11th Expert Meeting on Evaluation & Control of Coumpound Semiconductor Materials and Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00802566⟩

• Communication dans un congrès

Narrow linewidth tunable THz signal radiated by 1.55 µm photomixing

Alain Rolland, Guillaume Ducournau, Goulc'Hen Loas, Alexandre Beck, Fabio Pavanello, Emilien Peytavit, Tahsin Akalin, Mohammed Zaknoune, Jean-Francois Lampin, Marc Brunel, François Bondu, Marc Vallet, Mehdi Alouini

THz has become a wide field of investigation opening new opportunities in a growing number of domains of physics, chemistry, and biology. Among the different techniques existing today to generate THz fields, heterodyning two optical frequencies is a useful approach when tunability is required....

SPIE Optics + Photonics, Terahertz Emitters, Receivers, and Applications III, 2012, San Diego, CA, United States. pp.84960C-1-7, ⟨10.1117/12.929738⟩. ⟨hal-00803097⟩

• Communication dans un congrès

Interferometric technique for microwave measurement of high impedances

Kamel Haddadi, T. Lasri

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6259554⟩. ⟨hal-00802596⟩

• Article dans une revue

Tight-binding calculations of the optical properties of HgTe nanocrystals

Guy Allan, Christophe Delerue

We propose a tight-binding model of HgTe which gives an accurate band structure in a wide energy range compared to recent ab initio calculations. The inverted band structure near the Fermi level and its temperature dependence are also very well described. Using this parametrization, we study the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (16), pp.165437. ⟨10.1103/PhysRevB.86.165437⟩. ⟨hal-00787874⟩

• Communication dans un congrès

Optimization of AlGaN/GaN HEMT Schottky contact for microwave applications

S. Bouzid-Driad, H. Maher, M. Renvoise, P. Frijlink, M. Rocchi, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.119-122. ⟨hal-00814976⟩

• Communication dans un congrès

Millimeter wave elastomeric antennas

S. Hage-Ali, Y. Orlic, Nicolas Tiercelin, Ronan Sauleau, Philippe Pernod, Vladimir Preobrazhensky, Philippe Coquet

Advanced Electromagnetics Symposium, AES 2012, Apr 2012, Paris, France. ⟨hal-00772979⟩

• Article dans une revue

Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors

N. Clement, G. Larrieu, Emmanuel Dubois

Investigation of low-frequency noise in nanoscale Schottky-barrier (SB)-based field-effect transistors (SB-FETs) is of prime importance due to its large amplitude in emerging bottom-up devices. In addition, noise can give additional information on charge transport mechanisms. In this paper, we...

IEEE Transactions on Electron Devices, 2012, 59 (1), pp.180-187. ⟨10.1109/TED.2011.2169676⟩. ⟨hal-00787365⟩