Publicaciones

• Article dans une revue

Spectroscopic diagnostics and modelling of N2-Ar mixture discharge created by a RF helical coupling device - II. Vibrational distribution of N2(C3Πu, v') state

A. Annusova, C. Foissac, J. Kristof, P. Veis, P. Supiot

Plasma Sources Science and Technology, 2012, 21, pp.055022-1-11. ⟨hal-00790407⟩

• Article dans une revue

Comparative optical studies of InGaAs/GaAs quantum wells grown by MBE on (100) and (311)A GaAs planes

A. Khatab, M. Shafi, R.H. Mari, M. Aziz, M. Henini, G. Patriarche, David Troadec, M. Sadeghi, S. Wang

Physica Status Solidi C: Current Topics in Solid State Physics, 2012, 9, pp.1621-1623. ⟨10.1002/pssc.201100581⟩. ⟨hal-00790437⟩

• Article dans une revue

Exploitation of acoustic noise correlation for structural health monitoring applications

Najib Abou Leyla, Emmanuel Moulin, Jamal Assaad

Many recent studies in different domains exploited the ambient noise correlation to retrieve the Green's function between two points. This technique allows a passive characterization of a given medium in the presence of a perfect diffuse field. The aim of this paper is to apply this principle...

Open Acoustics Journal, 2012, 5, pp.23-31. ⟨10.2174/1874837601205010023⟩. ⟨hal-00790362⟩

• Communication dans un congrès

Dielectric Parameters Study of insulation Wire Free of Volatile Organic Compound

S. Ait Amar, D. Roger, G. Velu, M. Ben Fatallah, A. Habas, J.-P. Habas, P. Notingher, P. Frezel

IEEE Annual Conf. on El. Insulation and Diel. Phenomena CEIDP, 2012, Montréal, Canada. ⟨hal-01882817⟩

• Article dans une revue

Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors

F Medjdoub, Damien Ducatteau, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage...

Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (3), pp.034103-1-3. ⟨10.1143/APEX.5.034103⟩. ⟨hal-00786953⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to...

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• Communication dans un congrès

A neuro-inspired memristive organic-nanoparticule synapse-transistor (synapstor)

F. Alibart, Stéphane Pleutin, David Guérin, Dominique Vuillaume, Olivier Bichler, Weisheng Zhao, Christian Gamrat

European Materials Research Society Spring Meeting, E-MRS Spring 2012, Symposium I : Biological applications for organic electronic devices, 2012, Strasbourg, France. ⟨hal-00797697⟩

• Communication dans un congrès

Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801047⟩

• Article dans une revue

Mechanism of formation of the misfit dislocations at the cubic materials interfaces

Y. Wang, P. Ruterana, S. Kret, Jie Chen, S. El Kazzi, L. Desplanque, X. Wallart

Applied Physics Letters, 2012, 100, pp.262110-1-5. ⟨10.1063/1.4731787⟩. ⟨hal-00787021⟩

• Article dans une revue

Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films

J. Ge, G. Pan, Denis Remiens, Y. Chen, F. Cao, X.L. Dong, G.S. Wang

Applied Physics Letters, 2012, 101, pp.112905-1-3. ⟨10.1063/1.4752726⟩. ⟨hal-00788341⟩