Publicaciones

Affichage de 8321 à 8330 sur 16278


  • Chapitre d'ouvrage

Piezo-composite applications of ATILA

Anne-Christine Hladky

Uchino K., Debus J.C. Applications of ATILA FEM software to smart materials : case studies in designing devices, Woodhead Publishing Ltd, Chapter 8, 177-189, 2012, ISBN 978-0-8570-9065-2. ⟨hal-00798903⟩

  • Communication dans un congrès

Rotation de polarisation aux fréquences terahertz à partir de métamatériaux chiraux

Eric Lheurette, S. Wang, F. Garet, M. Astic, J.L. Coutaz, D. Lippens

Rencontre thématique GT2 du GDR Ondes - Micro, nano-structures et dispositifs de l'optique au microondes, 2012, Dijon, France. ⟨hal-00797338⟩

  • Communication dans un congrès

A millimeter-wave elastomeric microstrip phase shifter

S. Hage-Ali, Yovan Orlic, Nicolas Tiercelin, Ronan Sauleau, Vladimir Preobrazhensky, Philippe Pernod, Philippe Coquet

This communication reports an innovative lowcost millimeter-wave microstrip phase shifter using the mechanical reconfiguration of a metallized polydimethylsiloxane (PDMS) elastomeric ground plane. The reconfigurable ground plane is used to tune an air gap under a fused quartz substrate, inducing a...

IEEE MTT-S International Microwave Symposium, IMS 2012, Jun 2012, Montréal, Canada. ⟨10.1109/MWSYM.2012.6259722⟩. ⟨hal-00772985⟩

  • Article dans une revue

Receiver-aided predistortion of power amplifier non-linearities in cellular networks

J. Zeleny, C. Dehos, P. Rosson, A. Kaiser

IET Science Measurement and Technology, 2012, 6, pp.168-175. ⟨10.1049/iet-smt.2011.0016⟩. ⟨hal-00787384⟩

  • Article dans une revue

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

  • Article dans une revue

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

  • Article dans une revue

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩