Publicaciones

• Article dans une revue

Mechanism of ohmic Cr/Ni/Au contact formation on p-GaN

L. Magdenko, G. Patriarche, David Troadec, O. Mauguin, E. Morvan, M.A. Di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane

Journal of Vacuum Science and Technology, 2012, 30, pp.022205-1-5. ⟨10.1116/1.3688486⟩. ⟨hal-00788195⟩

• Article dans une revue

Hysteretic magnetoresistance in stress controled magnetic memory device

Yannick Dusch, V. Rudenko, Nicolas Tiercelin, S. Giordano, Vladimir Preobrazhensky, Philippe Pernod

Nanomaterialy i nanostruktury XXI vek., 2012, 2, pp.44-50. ⟨hal-00787359⟩

• Article dans une revue

A memristive nanoparticle/organic hybrid synapstor for neuroinspired computing

F. Alibart, S. Pleutin, O. Bichler, C. Gamrat, T. Serrano-Gotarredona, B. Linares-Barranco, D. Vuillaume

A large effort is devoted to the research of new computing paradigms associated to innovative nanotechnologies that should complement and/or propose alternative solutions to the classical Von Neumann/CMOS association. Among various propositions, Spiking Neural Network (SNN) seems a valid candidate...

Advanced Functional Materials, 2012, 22, pp.609-616. ⟨10.1002/adfm.201101935⟩. ⟨hal-00787366⟩

• Article dans une revue

Ultrasonic tomographic reconstruction of liquid flows using phase-conjugate waves

Y.V. Pyl'Nov, S.S. Koshelyuk, Philippe Pernod, Y.I. Kutlubaeva

Physics of Wave Phenomena, 2012, 20, pp.231-234. ⟨10.3103/S1541308X12030119⟩. ⟨hal-00787371⟩

• Article dans une revue

First demonstration of high-power GaN-on-silicon transistors at 40 GHz

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage...

IEEE Electron Device Letters, 2012, 33 (8), pp.1168-1170. ⟨10.1109/LED.2012.2198192⟩. ⟨hal-00786912⟩

• Article dans une revue

Intra-band gap in Lamb modes propagating in a periodic solid structure

J. Pierre, M. Renier, Bernard Bonello, Anne-Christine Hladky

Journal of Physics D: Applied Physics, 2012, 45, pp.185305-1-5. ⟨10.1088/0022-3727/45/18/185305⟩. ⟨hal-00786888⟩

• Article dans une revue

Lode dependency in the cold die powder compaction process

S.A. Rolland, P. Mosbah, D.T. Gethin, R.W. Lewis

Powder Technology, 2012, 221, pp.123-136. ⟨10.1016/j.powtec.2011.12.044⟩. ⟨hal-00786891⟩

• Article dans une revue

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-...

• Article dans une revue

[Review] Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J.L. Trolet, M. Piccione, V. Sbrugnera, B. Grimbert, Christophe Gaquière

Solid-State Electronics, 2012, 72, pp.15-21. ⟨10.1016/j.sse.2011.12.002⟩. ⟨hal-00788193⟩

• Article dans une revue

In-line dynamic acoustic behavior of a viscoelastic complex media : dough application

Georges Nassar, Bertrand Nongaillard, J. Cheio

Open Acoustics Journal, 2012, 5, pp.39-45. ⟨10.2174/1874837601205010039⟩. ⟨hal-00788343⟩